F
Frank Mehnke
Researcher at Technical University of Berlin
Publications - 61
Citations - 1770
Frank Mehnke is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 20, co-authored 53 publications receiving 1279 citations. Previous affiliations of Frank Mehnke include Free University of Berlin & Georgia Institute of Technology.
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Journal ArticleDOI
The 2020 UV emitter roadmap
Hiroshi Amano,Ramon Collazo,Carlo De Santi,Sven Einfeldt,Mitsuru Funato,Johannes Glaab,Sylvia Hagedorn,Akira Hirano,Hideki Hirayama,Ryota Ishii,Yukio Kashima,Yoichi Kawakami,Ronny Kirste,Michael Kneissl,Michael Kneissl,Robert W. Martin,Frank Mehnke,Matteo Meneghini,Abdallah Ougazzaden,Peter J. Parbrook,Siddharth Rajan,Pramod Reddy,Friedhard Römer,Jan Ruschel,Biplab Sarkar,Biplab Sarkar,Ferdinand Scholz,Leo J. Schowalter,Philip A. Shields,Zlatko Sitar,Luca Sulmoni,Tao Wang,Tim Wernicke,Markus Weyers,Bernd Witzigmann,Yuh-Renn Wu,Thomas Wunderer,Yuewei Zhang +37 more
TL;DR: In this article, the state of the art for the most important aspects of UV emitters, their challenges and their outlook for future developments are summarized. But, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance ofUV emitters to be pushed far beyond the current state.
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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
Norman Susilo,Sylvia Hagedorn,Dominik Jaeger,Hideto Miyake,Ute Zeimer,Christoph Reich,Bettina Neuschulz,Luca Sulmoni,Martin Guttmann,Frank Mehnke,Christian Kuhn,Tim Wernicke,Markus Weyers,Michael Kneissl,Michael Kneissl +14 more
TL;DR: In this paper, the performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire templates are investigated and compared with LEDs grown on epitaxially laterally overgrown (ELO) Aln/Sapphire.
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Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
Martin Martens,Frank Mehnke,Christian Kuhn,Chirstoph Reich,V. Kueller,A. Knauer,Carsten Netzel,Carsten Hartmann,Juergen Wollweber,Jens Rass,Tim Wernicke,Matthias Bickermann,Markus Weyers,Michael Kneissl +13 more
TL;DR: In this paper, the performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm were investigated, and the lowest pulse threshold energy density of 50 mJ/cm2 was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate.
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Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
Frank Mehnke,Christian Kuhn,Martin Guttmann,Christoph Reich,Tim Kolbe,V. Kueller,Arne Knauer,Mickael Lapeyrade,Sven Einfeldt,Jens Rass,Tim Wernicke,Markus Weyers,Michael Kneissl,Michael Kneissl +13 more
TL;DR: In this paper, the design and Mg-doping profile of AlN/Al0.7Ga0.3N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250nm was investigated.
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Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%
Frank Mehnke,Tim Wernicke,Harald Pingel,Christian Kuhn,Christoph Reich,V. Kueller,Arne Knauer,Mickael Lapeyrade,Markus Weyers,Michael Kneissl +9 more
TL;DR: In this article, the effects of SiH4/III ratio and aluminum content on the resistivity, the carrier concentration, and the mobility of AlGaN:Si layers were investigated.