J
Jialin Cai
Researcher at Chinese Academy of Sciences
Publications - 32
Citations - 469
Jialin Cai is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Spintronics & Tunnel magnetoresistance. The author has an hindex of 10, co-authored 27 publications receiving 291 citations. Previous affiliations of Jialin Cai include University of Science and Technology of China.
Papers
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Journal ArticleDOI
Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction
Jialin Cai,Bin Fang,Like Zhang,Wenxing Lv,Baoshun Zhang,Tiejun Zhou,Giovanni Finocchio,Zhongming Zeng +7 more
TL;DR: A voltage-controlled spintronic device that enables low-energy neuromorphic computing, with the stochastic behavior of the device being managed by an applied electric field via voltage- controlled magnetic anisotropy.
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Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices
Bin Fang,Mario Carpentieri,Steven Louis,Vasyl S. Tiberkevich,Andrei Slavin,Ilya Krivorotov,Riccardo Tomasello,Anna Giordano,Hong-Wen Jiang,Jialin Cai,Yaming Fan,Ze Hong Zhang,Baoshun Zhang,Jordan A. Katine,Kang L. Wang,Pedram Khalili Amiri,Pedram Khalili Amiri,Giovanni Finocchio,Zhongming Zeng +18 more
TL;DR: In this article, a broadband spintronic diode was used for microwave detection in a magnetic tunnel junction, with a spintric diode providing sufficient dc voltage to supply a low-power nanodevice.
Journal ArticleDOI
Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode
Like Zhang,Bin Fang,Jialin Cai,Mario Carpentieri,Vito Puliafito,Francesca Garescì,Pedram Khalili Amiri,Giovanni Finocchio,Zhongming Zeng +8 more
TL;DR: In this article, the authors show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kΩ while maintaining the advantages over other mechanisms such as vortex expulsion or nonlinear resonance.
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Multilevel storage device based on domain-wall motion in a magnetic tunnel junction
TL;DR: In this article, a multilevel storage device based on a magnetic tunnel junction (MTJ) is proposed, which is realized by pinning the domain wall at different positions in the free layer with a special geometric structure.
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Spintronic nano-scale harvester of broadband microwave energy
Bin Fang,Mario Carpentieri,Steven Louis,V. S. Tiberkevich,Andrei Slavin,Ilya Krivorotov,Riccardo Tomasello,Anna Giordano,Hong-Wen Jiang,Jialin Cai,Yaming Fan,Ze Hong Zhang,Baoshun Zhang,Jordan A. Katine,Kang L. Wang,Pedram Khalili Amiri,Giovanni Finocchio,Zhongming Zeng +17 more
TL;DR: In this paper, a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD) is presented, which contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage.