H
Hong-Wen Jiang
Researcher at University of California, Los Angeles
Publications - 153
Citations - 6741
Hong-Wen Jiang is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Qubit & Quantum dot. The author has an hindex of 39, co-authored 151 publications receiving 6120 citations. Previous affiliations of Hong-Wen Jiang include University of California & Massachusetts Institute of Technology.
Papers
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Journal ArticleDOI
Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures
R. B. Vrijen,Eli Yablonovitch,Kang L. Wang,Hong-Wen Jiang,Alexander A. Balandin,Vwani P. Roychowdhury,Tal Mor,David P. DiVincenzo +7 more
TL;DR: In this paper, the full power of modern electronic band-structure engineering and epitaxial heterostructures was applied to design a transistor that can sense and control a single-donor electron spin.
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Correction: Corrigendum: Ultrafast universal quantum control of a quantum-dot charge qubit using Landau–Zener–Stückelberg interference
Gang Cao,Hai-Ou Li,Tao Tu,Li Wang,Cheng Zhou,Ming Xiao,Guang-Can Guo,Hong-Wen Jiang,Guo-Ping Guo +8 more
TL;DR: In this article, the authors claimed electrical control of a quantum-dot charge qubit on a timescale orders of magnitude faster than previous measurements on electrically controlled charge- or spin-based qubits.
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Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor
TL;DR: Electrical sensing of the magnetic resonance spin-flips of a single electron paramagnetic spin centre, formed by a defect in the gate oxide of a standard silicon transistor, is demonstrated.
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Quantum liquid versus electron solid around nu =1/5 Landau-level filling.
TL;DR: In the high-magnetic-field low-disorder limit the ground state at v=1/5 Landau-level filling is an incompressible quantum limit, and in as much as the exponential divergencies are indicative of an electron solid this solid phase is reentrant in a narrow region above v= 1/5.
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Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
P. Khalili Amiri,Zhongming Zeng,Jürgen Langer,Hui Zhao,Graham E. Rowlands,Y.-J. Chen,Ilya Krivorotov,Jian-Ping Wang,Hong-Wen Jiang,Jordan A. Katine,Yiming Huai,Kosmas Galatsis,Kang L. Wang +12 more
TL;DR: In this article, in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current were presented.