다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Single-layer MoS2 transistors

There is intense interest in graphene in fields such as physics, chemistry, and materials science, among others. Interest in graphene's exceptional physical properties, chemical tunability, and potential for applications has generated thousands of publications and an accelerating pace of research, making review of such research timely. Here is an overview of the synthesis, properties, and applications of graphene and related materials (primarily, graphite oxide and its colloidal suspensions and materials made from them), from a materials science perspective.

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Graphene and Graphene Oxide: Synthesis, Properties, and Applications

The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 107 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling. 

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Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the substrate materials on the unaligned channel materials are much less explored. In this work, we report the realization of superlattice multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a ∼0.14° twisted double-layer boron nitride (tBN) substrate. Transport measurements reveal the emergence of three pairs of superlattice Dirac points around the pristine Dirac cone, featuring multiple metallic or insulating states surrounding the charge neutrality point. Displacement field tunable and electron–hole asymmetric Fermi velocities are indicated from temperature dependent measurements, along with the gapless dispersion of superlattice Dirac cones. The experimental observation of multiple Dirac cones in MLG/tBN heterostructure is supported by band structure calculations employing a periodic moiré potential. Our results unveil the potential of using twisted substrate as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientations, which might pave the way for a new branch of twistronics.

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Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate

We report the continuous argon ions irradiation of itinerant Fe3GeTe2, a two-dimensional ferromagnetic metal, with the modification to its transport properties measured in situ. Our results show that defects generated by argon ions irradiation can significantly weaken the magnetization (M) and coercive field (Hc) of Fe3GeTe2, demonstrating the tunable magnetism of this material. Specifically, at base temperature, we observed a reduction of M and Hc by up to 40% and 62.4%, respectively. After separating the contribution from different mechanisms based on the Tian-Ye-Jin (TYJ) scaling relation, it’s the skew scattering that dominates the contribution to anomalous Hall effect in argon ions irradiated Fe3GeTe2. These findings highlight the potential of in situ transport modification as an effective method for tailoring the magnetic properties of two-dimensional magnetic materials, and provides new insights into the mechanisms underlying the tunable magnetism in Fe3GeTe2.

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In Situ Tuning of Magnetism in Fe3GeTe2 via Argon Ions Irradiation

Quantum capacitance of two-dimensional (2D) systems contains useful physical information. Here, we report a high sensitivity quantum capacitance measurement with an improved radio frequency superheterodyne bridge technique for probing the electronic characteristic of Ge/SiGe 2D hole gas (2DHG) at low temperatures and under a perpendicular magnetic field B⊥. At low fields, a rapid decrease in quantum capacitance following [Formula: see text] dependence is observed, indicating an abrupt change in chemical potential near the gate boundary at high frequencies; at high fields, a series of capacitance oscillations are observed due to the Landau quantization and Zeeman splitting of the Ge/SiGe 2DHG, where gate-dependent effective [Formula: see text] factor under B⊥ is extracted. These results represent implementation of the high-precision capacitance measurement for exploring the physical properties of Ge/SiGe 2DHG.

Quantum capacitance properties of the holes in planar germanium

Graphene is an exciting new condensed matter system, both for the opportunity to observe the physics associated with massless Dirac Fermions in the laboratory, and because of material s parameters which make it attractive for technological applications such as high-frequency transistors and conducting, transparent fil ms. However, only very recently has there emerged a coherent understanding of the processes which govern the charge carrier mobility and conductivityin graphene. I will discuss experiments performed on ato mically-clean[1] graphene on SiO 2 in ultra-high vacuum to determine the chargecarrier scattering rates from charged impurities[2], lattice defects[3], and phonons (graphene acoustic phonons and substrate polar optical phonons)[4], as well as their dependence on dielectric environment[5]. The experiments point out both the promise of the material as well as the technological challenges that lie ahead in realizing better graphene samples.

Jian-Hao Chen

Papers

Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate

In Situ Tuning of Magnetism in Fe3GeTe2 via Argon Ions Irradiation

Quantum capacitance properties of the holes in planar germanium

Scattering mechanisms in graphene