J
Jian-Hao Chen
Researcher at Peking University
Publications - 90
Citations - 11043
Jian-Hao Chen is an academic researcher from Peking University. The author has contributed to research in topics: Graphene & Scattering. The author has an hindex of 30, co-authored 86 publications receiving 9888 citations. Previous affiliations of Jian-Hao Chen include National Center for Electron Microscopy & Southeast University.
Papers
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Journal ArticleDOI
Robust edge photocurrent response on layered Type II Weyl semimetal WTe2.
Qinsheng Wang,Jingchuan Zheng,Yuan He,Jin Cao,Xin Liu,Maoyuan Wang,Junchao Ma,Jiawei Lai,Hong Lu,Shuang Jia,Dayu Yan,Youguo Shi,Junxi Duan,Junfeng Han,Wende Xiao,Jian-Hao Chen,Kai Sun,Yugui Yao,Dong Sun +18 more
TL;DR: A robust photocurrent generated from charge separation of photoexcited electron-hole pairs at the edge of a type-II Weyl semimetal, Td-WTe2, due to crystalline-symmetry breaking along certain crystal fracture directions is demonstrated.
Journal Article
Intrinsic and Extrinsic performance limits of graphene device on SiO$_{2}$
Journal ArticleDOI
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor
Xiaoxi Li,Zhi-Qiang Fan,Peizhi Liu,Mao-Lin Chen,Xin Liu,Chuankun Jia,Dong-Ming Sun,Xiangwei Jiang,Zheng Vitto Han,Vincent Bouchiat,Junjie Guo,Jian-Hao Chen,Zhidong Zhang +12 more
TL;DR: In this paper, a reverted stacking technique is proposed to intercalate a wrinkle-free h-BN tunnel layer between MoS$ 2$ channel and contacting electrodes. But the authors do not consider the effect of the channel chemical potential on the channel's mobility.
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Thickness and growth-condition dependence of in-situ mobility and carrier density of epitaxial thin-film Bi2Se3
Jack Hellerstedt,Jack Hellerstedt,Mark T. Edmonds,Jian-Hao Chen,William G. Cullen,Changxi Zheng,Michael S. Fuhrer,Michael S. Fuhrer +7 more
TL;DR: In this article, the carrier density and mobility were measured directly in situ as a function of film thickness, and it was shown that Bi2Se3 as prepared by widely employed parameters is n-doped before exposure to atmosphere, and the doping is largely interfacial in origin.
Journal ArticleDOI
Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi$_2$Se$_3$
Jack Hellerstedt,Mark T. Edmonds,Jian-Hao Chen,William G. Cullen,Changxi Zheng,Michael S. Fuhrer +5 more
TL;DR: In this paper, Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness.