다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Single-layer MoS2 transistors

There is intense interest in graphene in fields such as physics, chemistry, and materials science, among others. Interest in graphene's exceptional physical properties, chemical tunability, and potential for applications has generated thousands of publications and an accelerating pace of research, making review of such research timely. Here is an overview of the synthesis, properties, and applications of graphene and related materials (primarily, graphite oxide and its colloidal suspensions and materials made from them), from a materials science perspective.

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Graphene and Graphene Oxide: Synthesis, Properties, and Applications

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Charged Impurity Scattering in Bilayer Graphene

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets.

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Atomic Structure of Graphene on SiO2

The layered ternary compound TaIrTe4 is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe4 crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe4 thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.

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Raman Signatures of Broken Inversion Symmetry and In‐Plane Anisotropy in Type‐II Weyl Semimetal Candidate TaIrTe4

Photosensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potential to break the fundamental performance limit of conventional photodetectors and solar cells. Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photodetection and energy harvesting arising from their gapless linear dispersion and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. This edge response is highly generic and arises universally in a wide class of quantum materials with similar crystal symmetries. The robust and generic edge current response provides a charge separation mechanism for photosensing and energy harvesting over broad wavelength range.

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Robust edge photocurrent response on layered type II Weyl semimetal WTe2.

We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with hydrogen adsorbates inducing intervalley mixing by exerting a short-range scattering potential. The saturation coverages for different devices are found to be proportional to their initial mobility, indicating that the number of native scatterers is proportional to the saturation coverage of hydrogen. By extrapolating this proportionality, we show that the field-effect mobility can reach $1.5\ifmmode\times\else\texttimes\fi{}{10}^{4}\text{ }{\text{cm}}^{2}/\text{V}\text{ }\text{s}$ in the absence of the hydrogen-adsorbing sites. This affinity to hydrogen is the signature of the most dominant type of native scatterers in graphene-based field-effect transistors on ${\text{SiO}}_{2}$.

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Jian-Hao Chen

Papers

Charged Impurity Scattering in Bilayer Graphene

Atomic Structure of Graphene on SiO2

Raman Signatures of Broken Inversion Symmetry and In‐Plane Anisotropy in Type‐II Weyl Semimetal Candidate TaIrTe4

Robust edge photocurrent response on layered type II Weyl semimetal WTe2.

Uncovering the dominant scatterer in graphene sheets on SiO 2