J
Jiaxin Wang
Researcher at Peking University
Publications - 39
Citations - 428
Jiaxin Wang is an academic researcher from Peking University. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 10, co-authored 39 publications receiving 351 citations.
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Journal ArticleDOI
An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs
TL;DR: In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified, and the transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively.
Journal ArticleDOI
A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction
TL;DR: In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average sub-threshold swing (SS), which owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying layer with smaller bandgap materials.
Proceedings ArticleDOI
Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective
Qianqian Huang,Ru Huang,Chunlei Wu,Zhu Hao,Cheng Chen,Jiaxin Wang,Lingyi Guo,Runsheng Wang,Le Ye,Yangyuan Wang +9 more
TL;DR: In this paper, a pocket-mSTFET (PMS-TFET) is proposed and experimentally demonstrated by evaluating the performance from device metrics to circuit implementation for low-power SoC applications.
Journal ArticleDOI
Vertical WS 2 /SnS 2 van der Waals Heterostructure for Tunneling Transistors
Jiaxin Wang,Rundong Jia,Qianqian Huang,Chen Pan,Jiadi Zhu,Huimin Wang,Cheng Chen,Yawen Zhang,Yuchao Yang,Haisheng Song,Feng Miao,Ru Huang +11 more
TL;DR: The optimal 2D-2D heterostructure for tunneling transistors is presented and elaborately engineered, taking into consideration both electric properties and material stability, and can guide possible development of energy-efficient future-generation electronics.
Proceedings ArticleDOI
First foundry platform of complementary tunnel-FETs in CMOS baseline technology for ultralow-power IoT applications: Manufacturability, variability and technology roadmap
Qianqian Huang,Rundong Jia,Cheng Chen,Zhu Hao,Lingyi Guo,Junyao Wang,Jiaxin Wang,Chunlei Wu,Runsheng Wang,Weihai Bu,Jing Kang,Wenbo Wang,Hanming Wu,Shiuh-Wuu Lee,Yangyuan Wang,Ru Huang +15 more
TL;DR: In this paper, complementary tunnel-FETs (C-TFETs) are integrated with CMOS foundry for high volume production, demonstrating an intrinsic tradeoff between performance enhancement and variability suppression induced by dominant variation source in traditional TFETs.