Jing Lin

TL;DR: In this paper, the authors measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios, and they observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a-to μc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3.

TL;DR: In this paper, the optical and electronic properties as a function of microcrystallinity were studied and it was shown that at low H dilution R⩽2, there is no measurable crystallinity by Raman spectroscopy and x-ray diffraction in the a-Si:H matrix, but an optical absorption peak at ∼1.25 eV appears; when R=2, the film shows the lowest subgap absorption, the highest photosensitivity, and the largest optical gap.

TL;DR: In this paper, X-ray, Raman, and conductivity measurements of hot wire CVD CVD films were studied by using H dilution ratio, R=H 2/SiH4, from 1 to 20.

TL;DR: In this paper, microcrystalline silicon (μc-Si) films were deposited by hot-wire chemical vapor deposition (HWCVD) at ∼240°C with varied hydrogen dilution.

TL;DR: In this paper, the authors studied light-soaking effects, such as photoconductivity degradation kinetics, the changes of conductivity activation energy, Ea, and the defect density of states (DOS) in a-Si:H films deposited by hot-wire CVD.