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Qi Wang

Researcher at National Renewable Energy Laboratory

Publications -  108
Citations -  1533

Qi Wang is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Silicon & Amorphous silicon. The author has an hindex of 19, co-authored 105 publications receiving 1390 citations. Previous affiliations of Qi Wang include Siemens Wind Power & Korea University.

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Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon

TL;DR: In this paper, the authors measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios, and they observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a-to μc-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3.
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Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells

TL;DR: In this paper, low substrate temperature during initiation of amorphous silicon emitter deposition by hot-wire chemical vapor deposition is found to be crucial for reaching high open-circuit voltage (V oc ) in an a-Si/c-Si heterojunction solar cell.
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Conducting polymer and hydrogenated amorphous silicon hybrid solar cells

TL;DR: An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated in this article, where the p-layer was a spin coated film of PEDOT:PSS [poly(3,4-ethylenedioxythiophene) poly (styrenesulfonate)].
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Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity

TL;DR: In this paper, the optical and electronic properties as a function of microcrystallinity were studied and it was shown that at low H dilution R⩽2, there is no measurable crystallinity by Raman spectroscopy and x-ray diffraction in the a-Si:H matrix, but an optical absorption peak at ∼1.25 eV appears; when R=2, the film shows the lowest subgap absorption, the highest photosensitivity, and the largest optical gap.
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Area-Dependent Switching in Thin Film-Silicon Devices

TL;DR: In this article, the area dependence of switching in both Cr/p + a-Si:H/Ag(Al) and Cr/ p + μc-Si/Ag (Al) filament switches is investigated.