scispace - formally typeset
J

Jiwoong Park

Researcher at University of Chicago

Publications -  193
Citations -  26885

Jiwoong Park is an academic researcher from University of Chicago. The author has contributed to research in topics: Graphene & Medicine. The author has an hindex of 57, co-authored 158 publications receiving 23316 citations. Previous affiliations of Jiwoong Park include University of California, Berkeley & Cornell University.

Papers
More filters
Journal ArticleDOI

Coulomb blockade and the Kondo effect in single-atom transistors

TL;DR: Two related molecules containing a Co ion bonded to polypyridyl ligands, attached to insulating tethers of different lengths are examined, enabling the fabrication of devices that exhibit either single-electron phenomena, such as Coulomb blockade or the Kondo effect.
Journal ArticleDOI

Grains and grain boundaries in single-layer graphene atomic patchwork quilts

TL;DR: This work determines the location and identity of every atom at a grain boundary and finds that different grains stitch together predominantly through pentagon–heptagon pairs, and reveals an unexpectedly small and intricate patchwork of grains connected by tilt boundaries.
Journal ArticleDOI

The valley Hall effect in MoS2 transistors

TL;DR: The observation of the so-called valley Hall effect in a monolayer of MoS2 opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
Journal ArticleDOI

Nanomechanical oscillations in a single-C60 transistor

TL;DR: Transport measurements are performed that provide evidence for a coupling between the centre-of-mass motion of the C60 molecules and single-electron hopping—a conduction mechanism that has not been observed previously in quantum dot studies.
Journal ArticleDOI

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

TL;DR: The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.