J
Jody Fronheiser
Researcher at General Electric
Publications - 45
Citations - 1762
Jody Fronheiser is an academic researcher from General Electric. The author has contributed to research in topics: Avalanche photodiode & Single-photon avalanche diode. The author has an hindex of 11, co-authored 45 publications receiving 1709 citations.
Papers
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Journal ArticleDOI
Silicon nanowire solar cells
Loucas Tsakalakos,Joleyn Balch,Jody Fronheiser,Bastiaan Arie Korevaar,Oleg Sulima,James A. Rand +5 more
TL;DR: In this paper, the optical reflectance of the silicon nanowire solar cells is reduced by one to two orders of magnitude compared to planar cells, and a promising current density of ∼1.6mA∕cm2 for 1.8cm2 cells was obtained, with a broad external quantum efficiency of ∼12% at 690nm.
Journal ArticleDOI
Strong broadband optical absorption in silicon nanowire films
Loucas Tsakalakos,Joleyn Balch,Jody Fronheiser,Min-Yi Shih,Stephen F. LeBoeuf,Matthew Pietrzykowski,Peter J. Codella,Bas A. Korevaar,Oleg Sulima,James A. Rand,Anilkumar Davuluru,Umakant D. Rapol +11 more
TL;DR: The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found to be higher than solid thin films of equivalent thickness.
Journal ArticleDOI
Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
Xiangyi Guo,Larry B. Rowland,Greg Dunne,Jody Fronheiser,Peter Micah Sandvik,Ariane L. Beck,Joe C. Campbell +6 more
TL;DR: In this article, ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes were shown to achieve an external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved.
Patent
Single conformal junction nanowire photovoltaic devices
TL;DR: In this paper, a conformal coating is applied to photovoltaic (PV) elements in order to provide a charge separating junction that is conformal and provide excellent light trapping and optical absorption properties.
Patent
Method for fabricating silicon carbide vertical MOSFET devices
Kevin Matocha,Jody Fronheiser,Larry B. Rowland,Jesse B. Tucker,Stephen Daley Arthur,Zachary Stum +5 more
TL;DR: In this article, a method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity opposite the first one, and an ohmic contact layer is formed within a bottom surface of the trench.