J
Jon Paul Maria
Researcher at Pennsylvania State University
Publications - 311
Citations - 12250
Jon Paul Maria is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 48, co-authored 282 publications receiving 9656 citations. Previous affiliations of Jon Paul Maria include North Carolina State University & DuPont.
Papers
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Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil
TL;DR: In this paper, a Ca-doped lead zirconate titanate (52/48) thin film capacitors were prepared on electroless nickel-coated copper foils for embedded capacitor applications.
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Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties
Seung-Hyun Kim,Dong Joo Kim,Jon Paul Maria,Angus I. Kingon,Stephen K. Streiffer,J. Im,Orlando Auciello,Alan R. Krauss +7 more
TL;DR: In this article, the authors showed that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SrBi2Ta2O9 (SBT) properties.
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Structural annealing of carbon coated aligned multi-walled carbon nanotube sheets
Shaghayegh Faraji,Kelly L. Stano,Christina M. Rost,Jon Paul Maria,Yuntian Zhu,Philip D. Bradford +5 more
TL;DR: In this article, structural annealing of pyrolytic carbon (PyC) coatings with various thicknesses on aligned multi-walled carbon nanotubes (AMWCNTs) was studied.
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As good as gold and better: conducting metal oxide materials for mid-infrared plasmonic applications
TL;DR: The field of infrared surface plasmon resonance (IR-SPR) spectroscopy has the potential to enable unique applications and technologies in chemical sensing, heat harvesting, and infrared detectors as mentioned in this paper.
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Ge doped GaN with controllable high carrier concentration for plasmonic applications
Ronny Kirste,Marc P. Hoffmann,Edward Sachet,Milena Bobea,Zachary Bryan,Isaac Bryan,Christian Nenstiel,Axel Hoffmann,Jon Paul Maria,Ramon Collazo,Zlatko Sitar +10 more
TL;DR: In this paper, a controlable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm−3 for a plasmonic device.