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MgxZn1−xO(0⩽x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

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TLDR
In this paper, high-pressure pulsed-laser deposition (PLD) was used to grow MgxZn1−xO nanowires on gold-covered sapphire single crystals.
Abstract
MgxZn1−xO nanowires with Mg-content x from 0 to 0.2 have been grown by high-pressure pulsed-laser deposition (PLD) on gold-covered sapphire single crystals. The PLD process allows for a unique wide-range control of morphology, diameter, and composition of the MgxZn1−xO nanowires. The diameter of single ZnO wires could be varied between about 50 and 3000 nm, and the Mg content x of MgxZn1−xO wire arrays was controlled via the PLD gas pressure. The microscopic homogeneity of Mg content is displayed by cathodoluminescence (CL) imaging of the excitonic peak energy. The fluctuation of CL peak energy between individual wires is about an order of magnitude smaller than the alloy broadening.

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Citations
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TL;DR: It is experimentally demonstrated that ZnO nanorods obtained by the arc discharge method show excellent performance and promise for applications in both UV and humidity sensors.
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Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires.

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Structure, microstructure and physical properties of ZnO based materials in various forms: bulk, thin film and nano

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References
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Journal ArticleDOI

A laser ablation method for the synthesis of crystalline semiconductor nanowires

TL;DR: Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
Journal ArticleDOI

Growth of nanowire superlattice structures for nanoscale photonics and electronics.

TL;DR: Single-nanowire photoluminescent, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.
Journal ArticleDOI

Controlled growth of ZnO nanowires and their optical properties

TL;DR: In this paper, a survey of recent developments in the rational synthesis of single-crystalline zinc oxide nanowires and their unique optical properties is presented, based on the fundamental understanding of the vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls have been achieved.
Journal ArticleDOI

MgxZn1−xO as a II–VI widegap semiconductor alloy

TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
Journal ArticleDOI

Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires

TL;DR: In this article, a hybrid pulsed laser ablation/chemical capor deposition (PLA-CVD) process was proposed for the synthesis of semiconductor nanowires with longitudinal ordered heterostructures.
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