Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

2009 IEEE International Solid-State Circuits Conference : digest of technical papers

Semiconductor technologies for 5G implementation at millimeter wave frequencies – Design challenges and current state of work

In this paper, a lumped-element dual-resonance resonator (LE-DRR) is proposed to design dual-band bandpass filter (DB-BPF) and reconfigurable filters. Two resonant modes of proposed LE-DRR are controlled by two diverse branches. The mixed electric and magnetic coupling (MEMC) implemented by two capacitors to provide electric coupling and one inductor to provide magnetic coupling is employed in the LE-DRR filters design. As an example, a 0.9/1.57-GHz DB-BPF with 3-dB fractional bandwidth (FBW) of 22.2%/11.8% is designed firstly. A reconfigurable DB-BPF with two independently controlled passbands is then designed. The measured results show that the central frequency (CF) of the 1st passband can be tuned from 0.617 to 0.817 GHz, and the CF of the 2nd passband can be tuned from 1.386 to 2.02 GHz. Finally, a multi-function reconfigurable filter is proposed by introducing two pairs of p-i-n diodes in the reconfigurable DB-BPF. The proposed multi-function reconfigurable filter has four operating modes, i.e., a reconfigurable DB-BPF operating mode, an all-stop filter operating mode, and two single-band tunable BPF operating modes. The all-stop filter operating mode has a 10.2-dB rejection within the interested frequency range. The CFs of two single-band tunable BPF operating modes can cover a continuous frequency range from 0.56 to 1.619 GHz. The proposed LE-DRR filters are compatible with an integrated circuit process.

Novel Dual-Band Bandpass Filter and Reconfigurable Filters Using Lumped-Element Dual-Resonance Resonators

A narrowband dual-band bandpass filter (BPF) with independently tunable passbands is presented through a systematic design approach A size-efficient coupling system is proposed with the capability of being integrated with additional resonators without increasing the size of the circuit Two flag-shaped resonators along with two stepped-impedance resonators are integrated with the coupling system to firstly enhance the quality response of the filter, and secondly to add an independent adjustability feature to the filter The dual passband of the filter is centered at 442 GHz and 72 GHz, respectively, with narrow passbands of 212% and 115% The lower and upper passbands can be swept independently over 600 MHz and 1000 MHz by changing only one parameter of the filter without any destructive effects on the frequency response According to United States frequency allocations, the first passband is convenient for mobile communications and the second passband can be used for satellite communications The filter has very good in- and out-of-band performance with very small passband insertion losses of 05 dB and 086 dB as well as a relatively strong stopband attenuation of 30 dB and 25 dB, respectively, for the case of lower and upper bands To verify the proposed approach, a prototype of the filter is fabricated and measured showing a good agreement between numerically calculated and measured results

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A Compact C-Band Bandpass Filter with an Adjustable Dual-Band Suitable for Satellite Communication Systems

A quad-mode resonator is proposed for novel design of dual-band bandpass filters (DBBPFs) with good selectivity and compact size The symmetrical resonator consists of a pair of coupled line sections (CLSs) and a transmission line section (TLS) Odd-/even-mode method is used to clarify the mode characteristics Four excited resonant modes are applied to produce two passbands The frequency ratio range can be adjusted by the CLSs, and the bandwidths can be controlled by the TLS After installing a pair of U-shape coupling arms, a DBBPF with five transmission zeros ( $TZ$ s) around the two passbands are designed and fabricated The measured results are in good agreement with the simulated results, demonstrating that the proposed filter is feasible in practical use

Compact Dual-band Bandpass Filter Using Coupled Lines Multimode Resonator

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

Silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) were exposed to 25 MeV Si4+ ion with equivalent absorbed dose from 200 krad(Si) to 10 Mrad(Si). The transistor characteristics such as forward Gummel, reverse Gummel, leakage current of base–emitter (BE) junction and base–collector (BC) junction were studied before and after irradiation and were used to quantify the dose tolerance to the swift heavy ion irradiation. The base current was found more sensitive than collector current and current gain appeared to decline with the ion fluence increasing. On the reverse Gummel characteristics, besides the degradation in the base current, an unexpected increase in emitter current was observed with the ion fluence increasing. The output characteristics of the irradiated SiGe HBTs exhibited a decrease in the collector current with the increasing ion fluence. The reverse leakage current of BE and BC junctions increased with the increase in ion fluence. The self-annealing effect at room temperature was found less influence on the performance degradation. The displacement damages in the transistor were found to dominate the performance degradation of SiGe HBT after 25 MeV Si4+ ion irradiation.

Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors

Humidity detection has significant and extensive applications in various fields. Herein, a miniaturized integrated relative humidity (RH) sensing system from surface acoustic wave (SAW) sensor to circuits and software is described. Delay-line SAW devices were designed and fabricated to be used as sensor and reference device. Graphene oxide (GO) was deposited on the surface of SAW sensor between interdigitated transducers (IDTs) as ultra-thin and wrinkled sensitive film by the method of drop-cast. The well-matched circuits and software with excellent stability and accuracy were developed to form a miniaturized integrated relative humidity sensing system with SAW sensor. A linear variation of the frequency shift is obtained in an extremely wide detection range from 0 to 97.3 %RH. Besides, the system exhibits a high sensitivity of 3.33 kHz/%RH, rapid response time of 80 s and recovery time of 72 s, good dynamic response and excellent repeatability. These results demonstrate that the SAW sensing system not only realizes humidity detection at system level, but also has excellent performance, which shows great feasibility and tremendous potential for relative humidity measurement applications.

A Miniaturized Integrated SAW Sensing System for Relative Humidity Based on Graphene Oxide Film

In this paper, we propose a parameter extraction method for a complete MOSFET small signal equivalent circuit model addressing nearly all the parasitic and non-quasi-static (NQS) effects. Extraction and de-embedding of drain/source/gate series resistances and the substrate network are found to be necessary for obtaining the intrinsic elements of the small-signal equivalent circuit. We demonstrate for the first time, a step-by-step procedure for the extraction and de-embedding of the extrinsic model parameters directly from measurements. As a result, a precise intrinsic parameters derivation in the saturation region is presented. Moreover, for the intrinsic small signal equivalent circuit, a gate drain branch is supplemented in parallel to describe parasitic gate-drain coupling under high frequency up to 60 GHz together with the NQS effects. Finally, the presented parameter extraction method is verified by comparing with the corresponding measurement data from the 40-nm RF CMOS process of Shanghai Huali Microelectronics Corporation.

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Jun Fu

Papers

Compact Dual-band Bandpass Filter Using Coupled Lines Multimode Resonator

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors

A Miniaturized Integrated SAW Sensing System for Relative Humidity Based on Graphene Oxide Film

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications