J
Jurgen Beister
Publications - 4
Citations - 93
Jurgen Beister is an academic researcher. The author has contributed to research in topics: Nanowire & Electron mobility. The author has an hindex of 2, co-authored 4 publications receiving 59 citations.
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Journal ArticleDOI
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
Journal ArticleDOI
Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices
TL;DR: In this paper, the authors investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field effect transistors with Ni-silicided source/drain contacts.
Journal ArticleDOI
Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
TL;DR: In this article, the geometrical magnetoresistance (MR) effect is applied to short-channel transistors with dimensions down to 30-nm gate length to investigate the carrier mobility of electrons and holes in the inversion channel.
Proceedings ArticleDOI
Development Of nanowire devices with quantum functionalities
Michael Stuiber,Laurens H. Willems van Beveren,Brett C. Johnson,Walter M. Weber,Andre Heinzig,Jurgen Beister,David N. Jamieson,Jeffrey C. McCallum +7 more
TL;DR: In this paper, a fabrication process was described to prepare doped vapor-liquid-solid (VLS) grown silicon nanowire samples in a 2-and 4-terminal measurement setup for electrical characterisation.