Marion Geidel

TL;DR: In this article, thin film capacitors were fabricated by sputtering TiN-Y doped HfO2-TiN stacks on silicon substrates, and the high remanent polarization and relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

TL;DR: In this article, a wide range of stoichiometries with regard to crystallization, barrier properties, resistivity, Cu adhesion and direct Cu plating behavior were analyzed with respect to co-sputtered Ru-Ta(N), Ru-W(N) and Ru-Mn composites.

TL;DR: In this article, the importance of O3 pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al2O3 layers is demonstrated for deposition temperatures of 50 °C.

TL;DR: In this article, the initial growth behavior of ruthenium during the thermal-activated atomic layer deposition (ALD) using [(ethylcyclopentadienyl)(pyrrolyl)ruthensium(II)] (ECPR) and molecular oxygen was investigated in a cluster tool combining an ALD reactor with a surface analysis unit under high vacuum conditions.