K
Kai Tian
Researcher at Xi'an Jiaotong University
Publications - 25
Citations - 269
Kai Tian is an academic researcher from Xi'an Jiaotong University. The author has contributed to research in topics: Depletion region & Gate oxide. The author has an hindex of 6, co-authored 24 publications receiving 128 citations.
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Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications
TL;DR: In this paper, the temperature dependence of dynamic performance of 1.2-kV 4H-SiC power mosfet s is systematically characterized over such wide temperature range of 90 −493 K and compared with 1.1kV Si IGBT by a layout optimized double pulse tester (DPT).
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An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET
TL;DR: In this article, an optimized U-shaped trench gate MOSFET with low resistance is proposed, which adds an n-type region, wrapping the p+ shielding region incorporated at the bottom of the trench gate.
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An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
TL;DR: In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with low ON-resistance and switching energy loss is proposed.
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4H–SiC Step Trench Gate Power Metal–Oxide–Semiconductor Field-Effect Transistor
TL;DR: In this paper, an improved 4H-SiC step trench-gate power metal-oxide-semiconductor field effect transistor (MOSFET) with a p-n junction in the trench is proposed.
Journal ArticleDOI
Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature
Kai Tian,Anders Hallén,Jinwei Qi,Muhammad Nawaz,Shenhui Ma,Menghua Wang,Shuwen Guo,Karim Elgammal,Ange Li,Weihua Liu +9 more
TL;DR: In this paper, the static, dynamic, and short-circuit properties of 1.2kV commercial 4H-SiC planar and trench gate MOSFETs are compared and analyzed in a wide temperature range from 90 to 493 K.