K
Katsunori Onishi
Researcher at University of Texas at Austin
Publications - 50
Citations - 2092
Katsunori Onishi is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Gate dielectric & Equivalent oxide thickness. The author has an hindex of 25, co-authored 50 publications receiving 2044 citations.
Papers
More filters
Journal ArticleDOI
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
Laegu Kang,Byoung Hun Lee,Wen-Jie Qi,Yongjoo Jeon,R. Nieh,Sundararaman Gopalan,Katsunori Onishi,J.C. Lee +7 more
TL;DR: In this paper, the leakage current of the 45/spl Aring/HfO/sub 2/ sample was about 1/spl times/10/sup -4/ A/cm/sup 2/ at +1.0 V with a breakdown field /spl sim/8.5 MV/cm.
Proceedings ArticleDOI
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
TL;DR: Physical, electrical and reliability characteristics of ultra thin HfO/sub 2/ as an alternative gate dielectric were studied for the first time in this article, where the process parameters of oxygen modulated dc magnetron sputtering were optimized to achieve an equivalent oxide thickness (EOT) of 11.5 /spl Aring/ without deducting the quantum mechanical effect.
Journal ArticleDOI
Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics
Chang Seok Kang,Hag Ju Cho,Katsunori Onishi,R. Nieh,Rino Choi,S. Gopalan,Sid Krishnan,Jeong H. Han,Jack C. Lee +8 more
TL;DR: Hafnium oxynitride (HfOxNy) gate dielectric was prepared using reactive sputtering followed by postdeposition annealing at 650°C in a N2 ambient as discussed by the authors.
Proceedings ArticleDOI
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si
TL;DR: MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si have been investigated Thin equivalent oxide thickness (EOT), low leakage, negligible frequency dispersion, interface density less than 10/sup 11/ cm/sup -2/ eV/SUP -1/, small hysteresis, excellent reliability characteristics have been demonstrated.
Journal ArticleDOI
Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application
Wen Jie Qi,R. Nieh,E. Dharmarajan,Byoung Hun Lee,Yongjoo Jeon,Laegu Kang,Katsunori Onishi,Jack C. Lee +7 more
TL;DR: In this paper, Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-reactive sputtering and the composition of Zr6Oy was controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants.