C
Chang Seok Kang
Researcher at University of Texas at Austin
Publications - 53
Citations - 1985
Chang Seok Kang is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 25, co-authored 53 publications receiving 1925 citations.
Papers
More filters
Journal ArticleDOI
Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics
Chang Seok Kang,Hag Ju Cho,Katsunori Onishi,R. Nieh,Rino Choi,S. Gopalan,Sid Krishnan,Jeong H. Han,Jack C. Lee +8 more
TL;DR: Hafnium oxynitride (HfOxNy) gate dielectric was prepared using reactive sputtering followed by postdeposition annealing at 650°C in a N2 ambient as discussed by the authors.
Journal ArticleDOI
A comparative study on the electrical conduction mechanisms of (ba0.5sr0.5)tio3 thin films on pt and iro2 electrodes
Cheol Seong Hwang,Byoung Taek Lee,Chang Seok Kang,Jin-Won Kim,Ki Hoon Lee,Hag-Ju Cho,Hideki Horii,Wan Don Kim,Sang-In Lee,Young Bum Roh,Moonyong Lee +10 more
TL;DR: In this article, the authors studied the Schottky emission behavior of Pt/(Ba 0.5Sr0.5)TiO3 (BST)/Pt, IrO2/BST/IrO2, and Pt/Bst/Pt capacitors with potential barrier heights of about 1.5-1.6 eV.
Journal ArticleDOI
Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films
Cheol Seong Hwang,Byoung Taek Lee,Chang Seok Kang,Ki Hoon Lee,Hag-Ju Cho,Horii Hideki,Wan Don Kim,Sang-In Lee,Moonyong Lee +8 more
TL;DR: In this paper, the electrical conduction properties of rf sputter-deposited (Ba, Sr)TiO3 (BST) films on Pt and IrO2 electrodes and metalorganic chemical vapor deposited (MOCVD) BST films on a Pt electrode were investigated and a new energy band model that satisfactorily explains the observed leakage current characteristics and film thickness dependent dielectric properties is proposed.
Journal ArticleDOI
Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs
K. Onishi,Rino Choi,Chang Seok Kang,Hag-Ju Cho,Young Hee Kim,R.E. Nieh,Jeong Han,S. Krishnan,M.S. Akbar,J.C. Lee +9 more
TL;DR: In this article, the bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time.
Journal ArticleDOI
The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode
Chang Seok Kang,Hag-Ju Cho,Rino Choi,Young Hee Kim,Chang Yong Kang,Se Jong Rhee,Chang Hwan Choi,M.S. Akbar,J.C. Lee +8 more
TL;DR: In this paper, the electrical and material characteristics of HfON gate dielectrics have been studied in comparison with HfO/sub 2/ by secondary ion mass spectroscopy (SIMS).