Proceedings ArticleDOI
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si
Wen-Jie Qi,R. Nieh,Laegu Kang,Yongjoo Jeon,Katsunori Onishi,Sanjay K. Banerjee,Jack C. Lee +6 more
- pp 145-148
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TLDR
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si have been investigated Thin equivalent oxide thickness (EOT), low leakage, negligible frequency dispersion, interface density less than 10/sup 11/ cm/sup -2/ eV/SUP -1/, small hysteresis, excellent reliability characteristics have been demonstrated.Abstract:
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si have been investigated Thin equivalent oxide thickness (EOT), low leakage, negligible frequency dispersion, interface density less than 10/sup 11/ cm/sup -2/ eV/sup -1/, small hysteresis, excellent reliability characteristics have been demonstrated The ZrO/sub 2/ film has been shown to be amorphous A thin interfacial Zr-silicate layer (k>8) exists and is beneficial in maintaining good interfacial quality This Zr-silicate layer grows after annealing and can be minimized through process optimization Well-behaved p-channel MOS transistor characteristics with a subthreshold swing of 80 mV/decade have also been achievedread more
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Patent
Atomic layer-deposited laaio3 films for gate dielectrics
Kie Y. Ahn,Leonard Forbes +1 more
TL;DR: In this paper, a LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence, which is thermodynamically stable and has minimal reactions with a silicon substrate or other structures during processing.
Patent
Enhanced atomic layer deposition
TL;DR: In this article, a method of enhanced atomic layer deposition is described, where the enhancement is the use of plasma, which assists the reaction of the precursors to deposit a layer on a substrate.
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Atomic layer deposited ZrTiO4 films
Kie Y. Ahn,Leonard Forbes +1 more
TL;DR: In this paper, an atomic layer deposition was used to create a dielectric layer with a relatively high dielectrics constant as compared with silicon oxide. But the results were limited to the case of Zr and Ti.
Journal ArticleDOI
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
Laegu Kang,Byoung Hun Lee,Wen-Jie Qi,Yongjoo Jeon,R. Nieh,Sundararaman Gopalan,Katsunori Onishi,J.C. Lee +7 more
TL;DR: In this paper, the leakage current of the 45/spl Aring/HfO/sub 2/ sample was about 1/spl times/10/sup -4/ A/cm/sup 2/ at +1.0 V with a breakdown field /spl sim/8.5 MV/cm.
Patent
Methods, systems, and apparatus for uniform chemical-vapor depositions
TL;DR: In this article, an outer chamber, a substrate holder, and a unique gas-distribution fixture are introduced for chemical vapor deposition (CVD) on a silicon substrate, which not only facilitates depositions of more uniform thickness, but also saves gas and speeds up the deposition process.
References
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K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
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The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds
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Proceedings ArticleDOI
High performance 20 /spl Aring/ NO oxynitride for gate dielectric in deep subquarter micron CMOS technology
TL;DR: In this paper, the degradation of current drive and peak transconductance in MOSFETs, previously observed in oxynitrides, can be eliminated by threshold voltage (Vt).
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