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Ke Zhao

Researcher at East China University of Science and Technology

Publications -  17
Citations -  2853

Ke Zhao is an academic researcher from East China University of Science and Technology. The author has contributed to research in topics: Quantum dot & Solar cell. The author has an hindex of 13, co-authored 14 publications receiving 2612 citations.

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High-Efficiency “Green” Quantum Dot Solar Cells

TL;DR: This efficiency is the best performance to date for QDSCs and demonstrates that it is possible to obtain comparable or even better photovoltaic performance from green CIS QDs to the toxic cadmium and lead chalcogenides QDs.
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Core/shell colloidal quantum dot exciplex states for the development of highly efficient quantum-dot-sensitized solar cells.

TL;DR: This work reports on using a CdTe/CdSe type-II core/shell QD sensitizer with an absorption range extending into the infrared region because of its exciplex state, which is covalently linked to TiO2 mesoporous electrodes by dropping a bifunctional linker molecule mercaptopropionic acid (MPA)-capped QD aqueous solution onto the film electrode.
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Near Infrared Absorption of CdSexTe1–x Alloyed Quantum Dot Sensitized Solar Cells with More than 6% Efficiency and High Stability

TL;DR: The solar cells with Cu2S counter electrodes based on eletrodeposition of Cu on conductive glass show long-term (more than 500 h) stability and are remarkably better than that of the reference CdSe and CdTe QD based ones.
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Boosting power conversion efficiencies of quantum-dot-sensitized solar cells beyond 8% by recombination control.

TL;DR: The ability of a novel sequential inorganic ZnS/SiO2 double layer treatment onto the QD-sensitized photoanode for strongly inhibiting interfacial recombination processes in QDSCs while providing improved cell stability is demonstrated.
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Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.

TL;DR: Characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices.