K
Kevin D. Leedy
Researcher at Air Force Research Laboratory
Publications - 180
Citations - 4270
Kevin D. Leedy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 31, co-authored 180 publications receiving 3443 citations. Previous affiliations of Kevin D. Leedy include University of Illinois at Urbana–Champaign & Air Force Institute of Technology.
Papers
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Journal ArticleDOI
Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications
TL;DR: In this paper, the Schottky barrier was analyzed and a consistent ideality factor was observed across the devices and a deep subthreshold region was extracted from the nominal characteristics and barrier influence was observed in the low voltage region.
Journal ArticleDOI
Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
TL;DR: In this paper, the resistive switching current voltage (I-V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior.
Proceedings ArticleDOI
Gallium oxide technologies and applications
Gregg H. Jessen,Kelson D. Chabak,Andrew J. Green,Neil Moser,Jonathan McCandless,Kevin D. Leedy,Antonio Crespo,Steve Tetlak +7 more
TL;DR: In this paper, the authors provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga 2 O 3.
Patent
Latching zip-mode actuated mono wafer MEMS switch method
TL;DR: In this article, a method for making a latching zipmode actuated mono wafer MEMS switch especially suited to capacitance coupled signal switching of microwave radio frequency signals is described.
Journal ArticleDOI
Classical and quantum conductivity in β-Ga 2 O 3
David C. Look,Kevin D. Leedy +1 more
TL;DR: The results indicate that quantum conductivity enables an understanding of classical conductivity in disordered, multi-phonon semiconductors.