K
Kevin D. Leedy
Researcher at Air Force Research Laboratory
Publications - 180
Citations - 4270
Kevin D. Leedy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 31, co-authored 180 publications receiving 3443 citations. Previous affiliations of Kevin D. Leedy include University of Illinois at Urbana–Champaign & Air Force Institute of Technology.
Papers
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Journal ArticleDOI
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Eric R. Heller,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +8 more
TL;DR: In this paper, the authors report on Sn-doped β-Ga2O3 MOSFETs with as-grown carrier concentrations from 0.7 to 1.6 and a fixed channel thickness of 200 nm.
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Coupling of Epsilon-Near-Zero Mode to Gap Plasmon Mode for Flat-Top Wideband Perfect Light Absorption
Joshua R. Hendrickson,Shivashankar Vangala,Chandriker Kavir Dass,Ricky Gibson,Ricky Gibson,John Goldsmith,Kevin D. Leedy,Dennis E. Walker,Justin W. Cleary,Wonkyu Kim,Junpeng Guo +10 more
TL;DR: In this paper, the indium tin oxide (ITO) subwavelength nanolayer was integrated into the insulating dielectric gap region to obtain a 240 nm wide, flat-top perfect (>98%) absorption centered at 1550 nm wavelength.
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High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films
TL;DR: In this paper, a combination of optimized growth parameters and postgrowth treatment was used to improve the high temperature stability of Al-doped ZnO transparent thin films in air, and optical transparency was better than 90% for wavelengths ranging from 380 to at least 2500nm with resistivities of 2×10−4Ωcm.
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Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics
TL;DR: In this article, the optical and electrical properties of indium tin oxide (ITO) films on Si substrates in the thickness range from 10 nm to 100 nm were investigated.
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Thin-Film Encapsulated RF MEMS Switches
TL;DR: In this paper, a wafer-level thin-film encapsulation process has been demonstrated to package radiofrequency (RF) microelectromechanical systems (MEMS) switches in a ~1nL inorganic enclosure with process temperatures not exceeding 300 degC.