K
Kevin D. Leedy
Researcher at Air Force Research Laboratory
Publications - 180
Citations - 4270
Kevin D. Leedy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 31, co-authored 180 publications receiving 3443 citations. Previous affiliations of Kevin D. Leedy include University of Illinois at Urbana–Champaign & Air Force Institute of Technology.
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Journal ArticleDOI
Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening
TL;DR: In this article, vertically self-organized multiple sets of In0.6Ga0.4As quantum dots (QDs) on GaAs were fabricated, which combines the concepts of variable amount deposition and shape stabilization and size equalization of QDs.
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Radiation-Hard ZnO Thin Film Transistors
J. Israel Ramirez,Yuanyuan V. Li,Hitesh A. Basantani,Kevin D. Leedy,Burhan Bayraktaroglu,Gregg H. Jessen,Thomas N. Jackson +6 more
TL;DR: In this article, the effects of gamma-ray exposure on polycrystalline ZnO thin-film transistors (TFTs) deposited by two different techniques were reported, and they were the most radiation-hard thin film transistors reported to date.
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Pulsed Power Performance of β -Ga₂O₃ MOSFETs at L-Band
Neil Moser,Tadj Asel,Kyle J. Liddy,Miles Lindquist,Nicholas C. Miller,Shin Mou,Adam T. Neal,Dennis E. Walker,Steve Tetlak,Kevin D. Leedy,Gregg H. Jessen,Andrew J. Green,Kelson D. Chabak +12 more
TL;DR: In this paper, a Ga2O3 metal-oxide-semiconductor field effect transistor operating at 1 and 2 GHz has been shown to have a maximum transducer gain, maximum output power, and peak power added efficiency of 13 dB (15 dB), 715 mW/mm, and 23.4% (21.2%) at 1 GHz (2 GHz).
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Large area Ba1 − xSrxTiO3 thin films for microwave applications deposited by pulsed laser ablation
TL;DR: In this article, a large area Ba 1−−− ǫ x Sr x TiO 3 (BST) thin films with diameters of 0.4 or 0.5 were deposited on 75mm diameter Si wafers in a pulsed laser deposition (PLD) chamber enabling full-wafer device fabrication using standard lithography.
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Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques
TL;DR: In this article, thermally stimulated techniques were used to comparatively study the electrical properties and deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk crystals.