K
Kevin D. Leedy
Researcher at Air Force Research Laboratory
Publications - 180
Citations - 4270
Kevin D. Leedy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 31, co-authored 180 publications receiving 3443 citations. Previous affiliations of Kevin D. Leedy include University of Illinois at Urbana–Champaign & Air Force Institute of Technology.
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Proceedings ArticleDOI
Model for thickness dependence of mobility and concentration in highly conductive ZnO
David C. Look,David C. Look,David C. Look,Kevin D. Leedy,Arnold Kiefer,Bruce Claflin,Naho Itagaki,K. Matsushima,Iping Suhariadi +8 more
TL;DR: In this paper, the dependences of the 294-K and 10-K mobility μ and volume carrier concentration n on thickness (d = 25 − 147 nm) were examined in Al-doped ZnO (AZO) layers grown in Ar ambient at 200 °C on quartz-glass substrates.
Journal ArticleDOI
Optoelectronic performance enhancement in pulsed laser deposited gallium-doped zinc oxide (GZO) films after UV laser crystallization
TL;DR: In this paper, the authors investigated the process-microstructure-property relationship during a UV laser crystallization of a transparent conductive layer of gallium doped zinc oxide (GZO) films after pulsed laser deposition.
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Organic Solution Deposition of Copper Seed Layers onto Barrier Metals
H. Gu,R. Fang,Thomas J. O'Keefe,Matthew J. O'Keefe,W.-S. Shih,J. A. M. Snook,Kevin D. Leedy,R. Cortez +7 more
TL;DR: In this article, a spontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated.
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Efficient broadband energy detection from the visible to near-infrared using a plasmon FET.
Seongman Cho,Mark Ciappesoni,Monica S. Allen,Jeffery Allen,Kevin D. Leedy,Brett R. Wenner,Sung Jin Kim,Sung Jin Kim +7 more
TL;DR: It is shown, using empirical data and simulation results, that detection loss exponentially increases as the volume of metal nanostructure increases and also a limited spectral response is possible using gold nanostructures in a plasmon to electric conversion device.
Proceedings ArticleDOI
Heterogeneous integration of low-temperature metal-oxide TFTs
TL;DR: In this article, a monolithically integrated cascode topology was used to couple a GaN HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the GaN threshold voltage from -3 V to +1 V.