J
Jonathan McCandless
Researcher at Cornell University
Publications - 27
Citations - 905
Jonathan McCandless is an academic researcher from Cornell University. The author has contributed to research in topics: Molecular beam epitaxy & Epitaxy. The author has an hindex of 8, co-authored 22 publications receiving 609 citations. Previous affiliations of Jonathan McCandless include Air Force Research Laboratory & Wyle Laboratories.
Papers
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Journal ArticleDOI
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak,Neil Moser,Andrew J. Green,Dennis E. Walker,Stephen E. Tetlak,Eric R. Heller,Antonio Crespo,Robert C. Fitch,Jonathan McCandless,Kevin D. Leedy,M. Baldini,Günter Wagner,Zbigniew Galazka,Xiuling Li,Gregg H. Jessen +14 more
TL;DR: In this paper, a top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate was used to construct fin-array field effect transistors (finFETs).
Journal ArticleDOI
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Adam T. Neal,Shin Mou,Elaheh Ahmadi,James S. Speck,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +11 more
TL;DR: In this paper, a Ge-doped Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-Doped semi-insulating substrates was used for MOSFETs.
Journal ArticleDOI
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
Kelson D. Chabak,Jonathan McCandless,Neil Moser,Andrew J. Green,Krishnamurthy Mahalingam,Antonio Crespo,Nolan S. Hendricks,Brandon M. Howe,Stephen E. Tetlak,Kevin D. Leedy,Robert C. Fitch,Daiki Wakimoto,Kohei Sasaki,Akito Kuramata,Gregg H. Jessen +14 more
TL;DR: In this paper, a Si-doped homoepitaxial channel grown by molecular beam epitaxy was removed using a gate recess process to partially remove the epitaxial channels under the 1-μm gated region to fully deplete at ${V}_{\textsf {GS}}= 0$ V.
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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
Kevin D. Leedy,Kelson D. Chabak,Vladimir Vasilyev,David C. Look,David C. Look,John Boeckl,Jeff L. Brown,Stephen E. Tetlak,Andrew J. Green,Neil Moser,Antonio Crespo,Darren B. Thomson,Robert C. Fitch,Jonathan McCandless,Gregg H. Jessen +14 more
TL;DR: Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) and (0001) Al 2O3 substrates in this paper, showing single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction.
Journal ArticleDOI
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Eric R. Heller,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +8 more
TL;DR: In this paper, the authors report on Sn-doped β-Ga2O3 MOSFETs with as-grown carrier concentrations from 0.7 to 1.6 and a fixed channel thickness of 200 nm.