J. Appl. Cryst.の発刊に際して

This paper gives the 2010 self-consistent set of values of the basic constants and conversion factors of physics and chemistry recommended by the Committee on Data for Science and Technology (CODATA) for international use. The 2010 adjustment takes into account the data considered in the 2006 adjustment as well as the data that became available from 1 January 2007, after the closing date of that adjustment, until 31 December 2010, the closing date of the new adjustment. Further, it describes in detail the adjustment of the values of the constants, including the selection of the final set of input data based on the results of least-squares analyses. The 2010 set replaces the previously recommended 2006 CODATA set and may also be found on the World Wide Web at physics.nist.gov/constants.

/pdf/codata-recommended-values-of-the-fundamental-physical-4bsdant71c.pdf

CODATA Recommended Values of the Fundamental Physical Constants: 2006

Fuel cells are uniquely capable of overcoming combustion efficiency limitations (e.g., the Carnot cycle). However, the linking of fuel cells (an energy conversion device) and hydrogen (an energy carrier) has emphasized investment in proton-exchange membrane fuel cells as part of a larger hydrogen economy and thus relegated fuel cells to a future technology. In contrast, solid oxide fuel cells are capable of operating on conventional fuels (as well as hydrogen) today. The main issue for solid oxide fuel cells is high operating temperature (about 800°C) and the resulting materials and cost limitations and operating complexities (e.g., thermal cycling). Recent solid oxide fuel cells results have demonstrated extremely high power densities of about 2 watts per square centimeter at 650°C along with flexible fueling, thus enabling higher efficiency within the current fuel infrastructure. Newly developed, high-conductivity electrolytes and nanostructured electrode designs provide a path for further performance improvement at much lower temperatures, down to ~350°C, thus providing opportunity to transform the way we convert and store energy.

http://science.sciencemag.org/content/sci/334/6058/935.full.pdf

Lowering the Temperature of Solid Oxide Fuel Cells

Review on recent progress of nanostructured anode materials for Li-ion batteries

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Heavily-doped, ultra-shallow junctions in boron implanted silicon using pulsed laser annealing have been created. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rategreater than 1010°C/sec. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, non-amorphizing 1 keV, 1e15 ions/cm2 boron is used. Four-point probe measurements (FPP) show a drop in sheet resistance withnonmelt laser annealing (NLA) alone. Transmission electron microscopy (TEM) shows the NLA dramatically affects the defect nucleation resulting in fewer defects with post annealing. Hall mobility and secondary ion mass spectroscopy (SIMS) results are also shown.

Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 × 1015 cm−2 to 8.0 × 1015 cm−2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of ~5.0 × 	1014 cm−2. Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 × 1015 cm−2 to 1.0 × 1015 cm−2. At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.

/pdf/amorphization-and-solid-phase-epitaxial-growth-of-c-cluster-4rb66vo8bg.pdf

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures.

WSix thin films deposited on InP substrates have been investigated for possible use as refractory ohmic contact materials for self‐aligned laser devices. The films have been rf diode sputtered using various Ar gas pressures from a single commercial target composed of W and Si with an atomic ratio of 1:1. Following the deposition, the WSix/InP samples were rapid thermal processed using a rapid thermal metalorganic chemical vapor deposition system in a controlled low‐pressure ambient of N2:H2 (9:1) and tertiarybutylphosphine. The as‐deposited films (∼100 nm thick) were amorphous but crystallized in the temperature range of 600–650 °C. The WSi2 phase forms first at 600 °C and then the W5Si3 nucleate with further heating at 650 °C. As a result of the crystallization, a reduction in the specific contact resistance to a value of 7.5×10−6 Ω cm2 and a decrease in the sheet resistance to values lower than 2 Ω/⧠ were observed. In addition, a significant reduction in the internal stress and an improvement in the WSi...

Rapid thermal processing of WSix contacts to InP in low‐pressure N2:H2 and tertiarybutylphosphine ambients

A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A below the surface. The intrinsic diffusivity of the boron in the doped epilayer was determined by simply annealing the as‐grown layer. The end of range (type II) dislocation loops were created using two overlapping room‐temperature Ge+ implants of 75 and 190 keV each at a dose of 1×1015/cm2. Upon annealing the amorphous layer regrew and a layer of type II dislocation loops formed ∼2300 A deep at a density of ∼8×1010/cm2. The enhancement in the buried boron layer diffusivity due to the type II loop forming Ge+ implant was observed to increase approximately between 2.5 and 5 min from 1500× to a value 2500× above the intrinsic diffusivity before dropping back to intrinsic levels after 30 min at 800 °C. A low‐e...

Kevin S. Jones

Papers

Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures.

Rapid thermal processing of WSix contacts to InP in low‐pressure N2:H2 and tertiarybutylphosphine ambients

Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer