Kevin S. Jones

TL;DR: In this paper, Czochralski grown n-type silicon wafers are preamorphized with 8 Ge+ ions at a constant dose of 1×1015 cm−2 and then implanted with 1keV, 1× 1015cm−2 B. Plan-view transmission electron microscopy, secondary-ion-mass spectrometry, and Hall effect measurements revealed no substantial differences in defect structure, junction depth, or mobi...

TL;DR: In this paper, the quantized Hall resistance of a GaAs/AlGaAs heterostructure was compared with a silicon MOSFET, and it was shown that within the 1σ combined uncertainty of ± 3.5 × 10−10 the quantization of Hall resistance is independent of the host lattice and Landau level index, and probably equal to he2.

TL;DR: Les donnees de photoluminescence montrent la substitution isoelectronique de l'oxygene dans ZnSe donne naissance a une paire de transitions en consequence of l'interaction d'echange entre la paire electron-trou piegee.

TL;DR: A multiscale computational model coupling atomistic molecular dynamics simulations with continuum elasticity was used for studying craters formed on Si surfaces by Ar cluster impacts, with energies of 20-50 eV/atom as mentioned in this paper.

TL;DR: Plan-view TEM suggests that with increasing dose, the formation of extended defects at the near surface and projected range in phosphorus implanted into epitaxially grown silicon is suggested.