K
Kevin S. Jones
Researcher at University of Florida
Publications - 440
Citations - 6558
Kevin S. Jones is an academic researcher from University of Florida. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 38, co-authored 437 publications receiving 6226 citations. Previous affiliations of Kevin S. Jones include Bell Labs & University of Michigan.
Papers
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Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
TL;DR: In this article, plan-view TEM micrographs were taken and the density of interstitials trapped in both the (311) defects and the type I and II perfect loops were measured.
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Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
TL;DR: In this paper, the effects of in-plane stress on SPEG kinetics are examined in intrinsic (0,0,1)Si. But, there are discrepancies between researchers in terms of the influence of in plane stress on growth rates.
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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
Erica A. Douglas,Chih-Yang Chang,D. J. Cheney,Brent P. Gila,Chien-Fong Lo,Liu Lu,R. Holzworth,P. G. Whiting,Kevin S. Jones,Glen D. Via,Jinhyung Kim,Soohwan Jang,Fan Ren,Stephen J. Pearton +13 more
TL;DR: AlGaN/GaN High Electron Mobility Transistors with various gate lengths have been step-stressed under both on- and off-state conditions reveal that the Schottky contact is the source of degradation, and the electric field is the main mechanism for degradation.
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Evolution of dislocation loops in silicon in an inert ambient—II
TL;DR: In this article, a plan-view TEM study has been made of the distribution, geometry and the time-dependent annealing behavior of type II dislocation loops introduced by 1 × 1015/cm2 50 keV Si+ implantation into silicon.
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Transient enhanced diffusion after laser thermal processing of ion implanted silicon
Kevin S. Jones,Heather Banisaukas,Josh Glassberg,Ebrahim Andideh,Craig Jasper,Allen Hoover,Aditya Agarwal,M. Rendon +7 more
TL;DR: In this paper, the effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) of boron was investigated, and it was shown that recrystallization of the amorphous layer following LTP results in a high concentration of stacking faults and microtwins in the regrown region.