K
Kuei-Hsien Chen
Researcher at Academia Sinica
Publications - 682
Citations - 27827
Kuei-Hsien Chen is an academic researcher from Academia Sinica. The author has contributed to research in topics: Thin film & Carbon nanotube. The author has an hindex of 75, co-authored 652 publications receiving 24809 citations. Previous affiliations of Kuei-Hsien Chen include Massachusetts Institute of Technology & KAIST.
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Effect of pore-directing agents and silanol groups in mesoporous silica nanoparticles as Nafion fillers on the performance of DMFCs
TL;DR: In this article, two kinds of mesoporous silica, namely SBA-15n and MSN, were prepared using P123 and CTMABr as pore-directing agents, respectively, and loaded into Nafion® to form composite membranes by solvent casting method.
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Studies of Electronic Excitations of Rectangular ZnO Nanorods by Electron Energy-Loss Spectroscopy
Chien Ting Wu,Ming-Wen Chu,Chuan-Pu Liu,Kuei-Hsien Chen,Li-Chyong Chen,Chun-Wei Chen,Cheng-Hsuan Chen,Cheng-Hsuan Chen +7 more
TL;DR: In this article, a single ZnO rectangular nanorod has been investigated by electron energy-loss spectroscopy in conjunction with scanning transmission electron microscopy (STEM-EELS).
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Optimal method for preparing sulfonated polyaryletherketones with high ion exchange capacity by acid‐catalyzed crosslinking for proton exchange membrane fuel cells
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Design of sculptured SnS/g-C3N4 photocatalytic nanostructure for highly efficient and selective CO2 conversion to methane
Hossam A. E. Omr,Raghunath Putikam,Mahmoud Kamal Hussien,Amr Sabbah,Tsai-Yu Lin,Kuei-Hsien Chen,Hengyi Wu,Shien-Ping Feng,Ming-Chang Lin,Hyeonseok Lee +9 more
TL;DR: In this paper , the authors demonstrate the SnS/g-C3N4 crystallized and nanostructured photocatalysts for efficient and selective CO2 conversion to CH4 by engineered thermal evaporation and the decoration of g-C 3N4 through a simple dipping method.
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Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
Sandip Dhara,P. Magudapathy,R. Kesavamoorthy,S. Kalavathi,V. S. Sastry,K.G.M. Nair,G. M. Hsu,Li-Chyong Chen,Kuei-Hsien Chen,K. Santhakumar,Tetsuo Soga +10 more
TL;DR: In this paper, the InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient.