Kyushiro Igarashi

TL;DR: In this article, the authors introduced magnetic dopants into the three-dimensional topological insulator dibismuth triselenide (Bi2Se3) to break the time reversal symmetry and further position the Fermi energy inside the gaps by simultaneous magnetic and charge doping.

TL;DR: Checkelsky et al. as mentioned in this paper investigated Dirac fermions on the surface of the topological insulator using scanning tunneling spectroscopy and found that a field-independent Landau level appears at the Dirac point.

TL;DR: The electrons associated with the conducting surface states of topological insulators are described by a two-component wavefunction as mentioned in this paper. And experiments on Bi2Se3 have shown that the structure of Landau levels reflects this two component nature.

TL;DR: In this paper, the authors report a systematic study of bulk and surface chemical doping effects on single Dirac cone topological insulator Bi2Se3 and Bi2Te3 and achieve full range control of charge carrier types and concentration, with the exact Fermi energy measured by angle-resolved photoemission spectroscopy (ARPES).

TL;DR: This work introduced magnetic dopants into the three-dimensional topological insulator dibismuth triselenide to break the time reversal symmetry and further position the Fermi energy inside the gaps by simultaneous magnetic and charge doping, thus achieving an insulating gapped Dirac state.