[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

Progress in the production and modification of PVDF membranes

Transparent conductors as solar energy materials: A panoramic review

In very small electronic devices the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance—referred to as a random telegraph signal (RTS) The study of RTSs has provided a powerful means of investigating the capture and emission kinetics of single defects, has demonstrated the defect origins of low-frequency (1/ƒ) noise in these devices, and has provided new insight into the nature of defects at the Si/SiO2 interface

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

Experimental studies on 1/f noise are reviewed with emphasis on experiments that may be decisive in finding the correct theoretical model for this type of noise. The experimental results are confronted with two theories: McWhorter's (1959) surface state theory and Clarke and Voss's (1974) theory of local temperature fluctuations. The applicability of either theory turns out to be very limited. The validity of an empirical relation is investigated. Its application to electronic devices proves successful. Experiments show that 1/f noise obeying the empirical relation ( alpha noise) is a fluctuation in the part of the mobility that is due to lattice scattering.

http://iopscience.iop.org/article/10.1088/0034-4885/44/5/001/pdf

Experimental studies on 1/f noise

Experimental facts about noise are presented which help us to understand the correlation between noise in a device and its reliability. The main advantages of noise measurements are that the tests are less destructive, faster and more sensitive than DC measurements after accelerated life tests. The following topics are addressed: 1) the kind of noise spectra in view of reliability diagnostics such as thermal noise, shot noise, the typical poor-device indicators like burst noise and generation-recombination noise and the 1/f/sup 2/ and 1/f noise; 2) why conduction noise is a quality indicator; 3) the quality of electrical contacts and vias; 4) electromigration damage; 5) the reliability in diode type devices like solar cells, laser diodes, and bipolar transistors; and 6) the series resistance in modern short channel MESFET, MODFET, and MOST devices. >

/pdf/noise-as-a-diagnostic-tool-for-quality-and-reliability-of-3vrnkdk5vf.pdf

Noise as a diagnostic tool for quality and reliability of electronic devices

General relation between refractive index and energy gap in semiconductors

Recent experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for the two schools of thought on the origin of 1/f noise. The consequences of models based on carrier-number /spl Delta/N or mobility fluctuations /spl Delta//spl mu/ on the device geometry and on the bias dependence of the 1/f noise are discussed. Circuit-simulation-oriented equations for the 1/f noise are discussed. The effects of scaling down on the 1/f noise is studied in the ohmic region as well as in saturation. In the ohmic region the contribution of the series resistance often can be ignored. However, in saturation the noise of the gate-voltage-dependent series resistance on the drain side plays a role in lightly doped drain LDD mini-MOST's. Surface and bulk p-channel devices are compared and the differences between n-and p-MOST's often observed is discussed. The relation between degradation effects by hot carriers or by /spl gamma/-irradiation on the one hand and the 1/f noise on the other is considered in terms of a /spl Delta/N or /spl Delta//spl mu/. Experimental results suggest that 1/f noise in n-MOST's is dominated by /spl Delta/N while in p-MOST's the noise is due to /spl Delta//spl mu/. >

/pdf/1-f-noise-in-mos-devices-mobility-or-number-fluctuations-57532vpj06.pdf

1/f noise in MOS devices, mobility or number fluctuations?

Values of the temperature coefficient of the refractive index were obtained from the derivation of a simple relation between energy band‐gap and refractive index in semiconductors. These values, (dn/dT)/n, were compared to the experimental data found in literature. Our model, with only one fitting parameter dB/dT=2.5×10−5 K−1 for all semiconductors, results in the best agreement with experimental data.

/pdf/empirical-temperature-dependence-of-the-refractive-index-of-3pc8l1pw51.pdf

L.K.J. Vandamme

Papers

Experimental studies on 1/f noise

Noise as a diagnostic tool for quality and reliability of electronic devices

General relation between refractive index and energy gap in semiconductors

1/f noise in MOS devices, mobility or number fluctuations?

Empirical temperature dependence of the refractive index of semiconductors