L
Le Si Dang
Researcher at University of Grenoble
Publications - 219
Citations - 7814
Le Si Dang is an academic researcher from University of Grenoble. The author has contributed to research in topics: Photoluminescence & Exciton. The author has an hindex of 38, co-authored 216 publications receiving 7282 citations. Previous affiliations of Le Si Dang include Centre national de la recherche scientifique & Joseph Fourier University.
Papers
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Journal ArticleDOI
Luminescence decay of distant donor-acceptor pairs in phosphorous-doped ZnTe
Le Si Dang,R. Romestain +1 more
TL;DR: In this article, isolated donor-acceptor pairs have been measured over the range of pair distance R ∼ 180 A in phosphorous-doped ZnTe, and the recombination rate as a function of the pair distance suggests an asymptotic behaviour of the acceptor envelope function with a A = 40 ± 10 A.
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Optical study of the piezoelectric field effect in (1 1 1)-oriented CdTe/CdMnTe strained quantum wells
Le Si Dang,Régis André,C. Bodin-Deshayes,Joel Cibert,H. Okumura,Guy Feuillet,Pierre-Henri Jouneau +6 more
TL;DR: In this paper, low-temperature reflection, transmission and photoluminescence studies of (1 1 1)-oriented CdTe/Cd1−xMnxTe (x ≈ 0.16) strained quantum wells grown on nominal and vicinal Cd0.95Zn0.05Te substrates by molecular beam epitaxy.
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Temperature dependence of optical gain in CdTe/CdMnTe heterostructures
R. Legras,Le Si Dang,C. Bodin,Joel Cibert,F. Marcenat,Guy Feuillet,J.L. Pautrat,D. Hervé,E. Molva +8 more
TL;DR: In this article, the authors measured the optical gain of CdTe/CdMnTe graded index separate confinement heterostructures as a function of optical power and temperature.
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Polariton parametric amplifier: pump dynamics in the coherent regime
TL;DR: The polariton parametric amplification is found to result in a strong quenching and saturation of the pump coherence lifetime above the threshold, and an angle-dependent collision broadening associated with the efficiency of the polariton scattering towards the excitonic reservoir.
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Influence of inhomogeneous strain relaxation on the photoluminescence of II-VI nanostructures
Yann-Michel Niquet,Cécile Gourgon,Le Si Dang,Henri Mariette,Catherine Priester,Christophe Vieu,H. Straub,G. Brunthaler,AA Anton Darhuber,Th. Grill,W. Faschinger,G. Bauer +11 more
TL;DR: In this article, the authors compare calculations which allow us to obtain strain fields in etched quantum wires (QWRs) and quantum dots (QDs) without making any simplifying assumption.