Bose-Einstein condensation (BEC) has been observed in a dilute gas of sodium atoms. A Bose-Einstein condensate consists of a macroscopic population of the ground state of the system, and is a coherent state of matter. In an ideal gas, this phase transition is purely quantum-statistical. The study of BEC in weakly interacting systems which can be controlled and observed with precision holds the promise of revealing new macroscopic quantum phenomena that can be understood from first principles.

Bose-Einstein condensation in a gas of sodium atoms

Topological photonics is a rapidly emerging field of research in which geometrical and topological ideas are exploited to design and control the behavior of light. Drawing inspiration from the discovery of the quantum Hall effects and topological insulators in condensed matter, recent advances have shown how to engineer analogous effects also for photons, leading to remarkable phenomena such as the robust unidirectional propagation of light, which hold great promise for applications. Thanks to the flexibility and diversity of photonics systems, this field is also opening up new opportunities to realize exotic topological models and to probe and exploit topological effects in new ways. This article reviews experimental and theoretical developments in topological photonics across a wide range of experimental platforms, including photonic crystals, waveguides, metamaterials, cavities, optomechanics, silicon photonics, and circuit QED. A discussion of how changing the dimensionality and symmetries of photonics systems has allowed for the realization of different topological phases is offered, and progress in understanding the interplay of topology with non-Hermitian effects, such as dissipation, is reviewed. As an exciting perspective, topological photonics can be combined with optical nonlinearities, leading toward new collective phenomena and novel strongly correlated states of light, such as an analog of the fractional quantum Hall effect.

Topological Photonics

Phase transitions to quantum condensed phases—such as Bose–Einstein condensation (BEC), superfluidity, and superconductivity—have long fascinated scientists, as they bring pure quantum effects to a macroscopic scale. BEC has, for example, famously been demonstrated in dilute atom gas of rubidium atoms at temperatures below 200 nanokelvin. Much effort has been devoted to finding a solid-state system in which BEC can take place. Promising candidate systems are semiconductor microcavities, in which photons are confined and strongly coupled to electronic excitations, leading to the creation of exciton polaritons. These bosonic quasi-particles are 109 times lighter than rubidium atoms, thus theoretically permitting BEC to occur at standard cryogenic temperatures. Here we detail a comprehensive set of experiments giving compelling evidence for BEC of polaritons. Above a critical density, we observe massive occupation of the ground state developing from a polariton gas at thermal equilibrium at 19 K, an increase of temporal coherence, and the build-up of long-range spatial coherence and linear polarization, all of which indicate the spontaneous onset of a macroscopic quantum phase. Bose–Einstein condensation (BEC), a form of matter first postulated in 1924, has famously been demonstrated in dilute atomic gases at ultra-low temperatures. Much effort is now being devoted to exploring solid-state systems in which BEC can occur. In theory semiconductor microcavities, where photons are confined and coupled to electronic excitations leading to the creation of polaritons, could allow BEC at standard cryogenic temperatures. Kasprzak et al. now present experiments in which polaritons are excited in such a microcavity. Above a critical polariton density, spontaneous onset of a macroscopic quantum phase occurs, indicating a solid-state BEC. BEC should also be possible at higher temperatures if coupling of light with solid excitations is sufficiently strong. Demokritov et al. have achieved just that, BEC at room temperature in a gas of magnons, which are a type of magnetic excitation. This paper presents a comprehensive set of experiments in which polaritons are excited in a semiconductor microcavity. Above a critical density of polaritons, massive occupation of the ground state at 19 K is observed and various pieces of experimental evidence point to a spontaneous onset of a macroscopic quantum phase.

Bose-Einstein condensation of exciton polaritons

Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

(b) Write out the equations for the time dependence of ρ11, ρ22, ρ12 and ρ21 assuming that a light field interaction V = -μ12Ee iωt + c.c. couples only levels |1> and |2>, and that the excited levels exhibit spontaneous decay. (8 marks) (c) Under steady-state conditions, find the ratio of populations in states |2> and |3>. (3 marks) (d) Find the slowly varying amplitude ̃ ρ 12 of the polarization ρ12 = ̃ ρ 12e iωt . (6 marks) (e) In the limiting case that no decay is possible from intermediate level |3>, what is the ground state population ρ11(∞)? (2 marks) 2. (15 marks total) In a 2-level atom system subjected to a strong field, dressed states are created in the form |D1(n)> = sin θ |1,n> + cos θ |2,n-1> |D2(n)> = cos θ |1,n> sin θ |2,n-1>

The Quantum Theory of Light

Fine structure of the exciton in a single asymmetric CdTe quantum dot

We demonstrate the feasibility of a novel microgun‐pumped semiconductor laser. This is the most compact (a few cm3) and the lowest threshold electron‐beam‐pumped semiconductor laser ever reported. The electron source is provided by a 104–105/mm2 array of field emissive microtip cathodes each of 1.5 μm diam. The laser operates below 10 kV and below 1 A/cm2. Laser action in a quasi‐cw mode with 5 μs pulses at 2 kHz has been obtained between 90 and 300 K with CdTe‐CdMnTe graded index separate confinement quantum‐well heterostructures, as well as with GaAs‐GaAlAs structures. Since neither doping nor ohmic contacts are needed, the microgun laser can use all direct gap semiconductors. It appears as a viable solution for making compact II‐VI lasers in the visible domain.

Microgun-pumped semiconductor laser

Carrier depletion and transport in a single ZnO nanowire Schottky device have been investigated at 5 K, using cathodoluminescence measurements. An exciton diffusion length of 200 nm has been determined along the nanowire axis. The depletion width is found to increase linearly with the reverse bias. The origin of this unusual dependence in semiconductor material is discussed in terms of charge location and dimensional effects on the screening of the junction electric field.

Carrier depletion and exciton diffusion in a single ZnO nanowire.

We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zero-phonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission.

Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

Molecular-beam-epitaxy growth of Eu-doped GaN quantum dots embedded in AlN has been achieved. The crucial issue of Eu location has been addressed by extended x-ray absorption fine structure measurements. By comparing the signature of the Eu short-range environment for several samples, it is concluded that Eu is mostly incorporated in GaN dots. Intense cathodoluminescence associated with Eu has been measured, with no GaN bandedge emission, evidence that carrier recombination mostly occurs through rare-earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of the temperature is suggested to be further confirmation of the recombination of confined carriers through Eu ion excitation.

Le Si Dang

Papers

Fine structure of the exciton in a single asymmetric CdTe quantum dot

Microgun-pumped semiconductor laser

Carrier depletion and exciton diffusion in a single ZnO nanowire.

Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

GaN quantum dots doped with Tb