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Le Si Dang

Researcher at University of Grenoble

Publications -  219
Citations -  7814

Le Si Dang is an academic researcher from University of Grenoble. The author has contributed to research in topics: Photoluminescence & Exciton. The author has an hindex of 38, co-authored 216 publications receiving 7282 citations. Previous affiliations of Le Si Dang include Centre national de la recherche scientifique & Joseph Fourier University.

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Optical linewidth and field fluctuations in piezoelectric quantum wells.

TL;DR: The photoluminescence linewidth in CdTe-based piezoelectric quantum wells increases with the quantum-well width, which demonstrates the contribution of fluctuations of the built-in field, which appear strongly correlated with the width of the x-ray-diffraction rocking curve.
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Photoluminescence of CdTe / ZnTe semiconductor wires and dots

TL;DR: In this article, the intrinsic exciton photoluminescence recombination (X line) was observed for wires (dots) as small as 100 nm (130 nm).
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Evidence of Polariton Stimulation in Semiconductor Microcavities

TL;DR: In this article, the authors studied the photoluminescence of the lower polariton in CdTe microcavities at low temperature, using nonresonant excitation.
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Cavity-Polariton Effects in II-VI Microcavities

TL;DR: In this paper, a review of the optical properties of CdTe-based microcavities operating in the strong coupling regime is given, as well as the strength of the exciton-photon coupling, dynamic optical properties, and relaxation processes along polaniton dispersion curves.
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Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths

TL;DR: In this article, the effect of Si doping localization on the optical and structural properties of GaN/AlN multiple-quantum-well structures for intersubband (ISB) absorption at 1.55μm was studied.