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Le Si Dang

Researcher at University of Grenoble

Publications -  219
Citations -  7814

Le Si Dang is an academic researcher from University of Grenoble. The author has contributed to research in topics: Photoluminescence & Exciton. The author has an hindex of 38, co-authored 216 publications receiving 7282 citations. Previous affiliations of Le Si Dang include Centre national de la recherche scientifique & Joseph Fourier University.

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Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds

TL;DR: In this paper, the growth and characterization of quaternary AlGaInN compounds by plasma-assisted molecular beam epitaxy is described, where a monolayer of In segregates at the growth front.
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Synchronized and desynchronized phases of exciton-polariton condensates in the presence of disorder

TL;DR: Condensation of exciton polaritons in semiconductor microcavities takes place despite in-plane disorder, and in the case of strong disorder, several non-phase-locked condensates can be evidenced.
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Probing exciton localization in nonpolar GaN/AlN quantum dots by single-dot optical spectroscopy

TL;DR: In this article, an optical spectroscopy study of nonpolar quantum dots by time-resolved photoluminescence and by microphotoluminecence is presented, which indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size.
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Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate

TL;DR: In this article, the fabrication of light emitting diodes (LEDs) based on GaN core/shell wires on conductive substrates by metal organic vapour phase epitaxy is described.
Posted Content

One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature

TL;DR: In this article, the authors showed that excitons in semiconductors can be totally decoupled from the phonon bath, even at room temperature, thanks to their strong interaction with photons.