L
Le Si Dang
Researcher at University of Grenoble
Publications - 219
Citations - 7814
Le Si Dang is an academic researcher from University of Grenoble. The author has contributed to research in topics: Photoluminescence & Exciton. The author has an hindex of 38, co-authored 216 publications receiving 7282 citations. Previous affiliations of Le Si Dang include Centre national de la recherche scientifique & Joseph Fourier University.
Papers
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Journal ArticleDOI
Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires
Eunsoon Oh,Byoung Woo Lee,So Jeong Shim,Heon Jin Choi,Byoung Hee Son,Yeong Hwan Ahn,Le Si Dang +6 more
TL;DR: In this paper, single crystalline GaN nanowires, with 100nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K.
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Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs
TL;DR: In this paper, the residual strains in (001 and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs were investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature.
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Growth and characterisation of self-assembled cubic GaN quantum dots
Christoph Adelmann,E Martinez Guerrero,F. Chabuel,J. Simon,B Bataillou,Guido Mula,Le Si Dang,N. T. Pelekanos,Bruno Daudin,Guy Feuillet,Henri Mariette +10 more
TL;DR: In this paper, self-assembled cubic GaN quantum dots have been grown by plasma assisted molecular-beam epitaxy on cubic AlN, showing ultraviolet photo and cathodo-luminescence with no thermal quenching up to room temperature.
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Nonlinear piezoelectricity: The effect of pressure on CdTe.
TL;DR: The observation of nonlinear piezoelectricity under hydrostatic pressures in a semiconductor, which arises because the ionic and electronic contributions to the total polarization nearly cancel, as predicted by a recent ab initio calculation.
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Monitoring the dynamics of a coherent cavity polariton population
TL;DR: In this article, the authors report on time-resolved photoluminescence measurements on a II-VI semiconductor microcavity in the strong coupling regime and observe the buildup of a large population in the polariton states close to the Brillouin-zone center.