Lény Baczkowski

TL;DR: In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.

TL;DR: In this article, the authors evaluate the interests of a new thermoreflectance thermography system, for the characterization of AlGaN/GaN HEMTs temperature, which allows temperature measurements very close to the hot spot and then, gives a better estimation of the maximal device temperature that can be used to improve thermal simulation.

TL;DR: In this paper, the power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies were presented, and the high power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high frequency, high power, and high temperature operation.

TL;DR: In this paper, temperature measurements applied X-band RF dynamic signal are presented for thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions.

TL;DR: In this article, thin-film coatings for improved performances of GaN-based HEMTs are investigated, where AlN coatings are used either as primary or secondary passivation to reduce the thermal resistance of the transistors.