E
Erhard Kohn
Researcher at University of Ulm
Publications - 257
Citations - 6059
Erhard Kohn is an academic researcher from University of Ulm. The author has contributed to research in topics: Diamond & Field-effect transistor. The author has an hindex of 42, co-authored 248 publications receiving 5792 citations. Previous affiliations of Erhard Kohn include University of Stuttgart & University of Wales.
Papers
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Journal ArticleDOI
Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs
TL;DR: In this article, it was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure material itself during operation above 600/spl deg/C.
Proceedings ArticleDOI
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Farid Medjdoub,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Damien Ducatteau,Christophe Gaquiere,Nicolas Grandjean,Erhard Kohn +8 more
TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.
Journal ArticleDOI
Current instabilities in GaN-based devices
I. Daumiller,Didier Theron,Christophe Gaquiere,Andrei Vescan,R. Dietrich,A. Wieszt,Helmut Leier,Ramakrishna Vetury,Umesh K. Mishra,I. P. Smorchkova,Sarah L. Keller,Chanh Nguyen,Erhard Kohn +12 more
TL;DR: In this paper, the full channel charge of an AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions, where the output current amplitude is drastically reduced.
Journal ArticleDOI
MOVPE growth of GaN on Si(1 1 1) substrates
Armin Dadgar,M. Poschenrieder,Jürgen Bläsing,O. Contreras,Frank Bertram,T. Riemann,A. Reiher,Mike Kunze,I. Daumiller,A. Krtschil,A. Diez,A. Kaluza,A. Modlich,Markus Kamp,Jürgen Christen,Fernando Ponce,Erhard Kohn,Alois Krost +17 more
TL;DR: In this paper, a reduction in dislocation density from 10 10 to 10 9 cm -2 is observed for LT-AIN interlayers which can be further improved using monolayer thick Si x N y in situ masking and subsequent lateral overgrowth.
Journal ArticleDOI
Diamond MEMS — a new emerging technology
TL;DR: In this paper, highly oriented chemical vapor deposition (CVD) diamond films were deposited on large area Si-substrates, micromachined into structured membranes and applied to two demonstrators: a seismic mass membrane acceleration sensor and a liquid ejector based on a diamond microspot heater.