L
Lu Huang
Researcher at Xidian University
Publications - 11
Citations - 324
Lu Huang is an academic researcher from Xidian University. The author has contributed to research in topics: Breakdown voltage & Sapphire. The author has an hindex of 6, co-authored 11 publications receiving 239 citations.
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Journal ArticleDOI
(AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity
TL;DR: In this article, single crystallinity (AlGa)2O3 solar-blind photodetectors are epitaxially grown on sapphire, and measured transmittance spectra and responsivity demonstrate that (Al Ga 2O3) photodets achieve a wider bandgap compared to a Ga2O 3 device.
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Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures
Lu Huang,Qian Feng,Genquan Han,Fuguo Li,Xiang Li,Fang Liwei,Xing Xiangyu,Jincheng Zhang,Yue Hao +8 more
TL;DR: In this article, a photodetector was grown on sapphire utilizing the laser molecular beam epitaxy tool and the impact of oxygen pressure in growth chamber on the crystal quality, surface morphology, chemical component, and electrical performance of the photoder.
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Comparison Study of $\beta $ -Ga 2 O 3 Photodetectors on Bulk Substrate and Sapphire
Qian Feng,Lu Huang,Genquan Han,Fuguo Li,Xiang Li,Fang Liwei,Xing Xiangyu,Jincheng Zhang,Wenxiang Mu,Zhitai Jia,Daoyou Guo,Weihua Tang,Xutang Tao,Yue Hao +13 more
TL;DR: In this article, the authors reported that the Ga2O3 photodetector epitaxially grown on sapphire achieves a blueshift of bandgap in comparison with the bulk device.
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Influence of annealing atmosphere on the performance of a β-Ga2O3 thin film and photodetector
TL;DR: The influence of the annealing atmosphere on the crystal structure and optical properties of Ga2O3 films was investigated in this article, where a photodetector was fabricated using as-grown and annealed β-GaO3 epilayers.
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Band alignment of SiO 2 /(Al x Ga 1-x ) 2 O 3 (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy
Zhaoqing Feng,Qian Feng,Jincheng Zhang,Xiang Li,Fuguo Li,Lu Huang,Hong-Yan Chen,Hong-Liang Lu,Yue Hao +8 more
TL;DR: In this article, the authors investigated the band alignment of SiO2/(AlxGa1-x)2O3 (0.49) interfaces using high-resolution X-ray diffraction measurements.