M
M. K. Weldon
Researcher at Alcatel-Lucent
Publications - 20
Citations - 1279
M. K. Weldon is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Infrared spectroscopy & Silicon. The author has an hindex of 13, co-authored 20 publications receiving 1254 citations.
Papers
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Journal ArticleDOI
On the mechanism of the hydrogen-induced exfoliation of silicon
M. K. Weldon,V. E. Marsico,Yves J. Chabal,A. Agarwal,D. J. Eaglesham,J. Sapjeta,W. L. Brown,D. C. Jacobson,Yves Caudano,S. B. Christman,E. E. Chaban +10 more
TL;DR: In this paper, the fundamental mechanism underlying hydrogen-induced exfoliation of silicon, using a combination of spectroscopic and microscopic techniques, was investigated, and the evolution of the internal defect structure as a function of implanted hydrogen concentration and annealing temperature was studied.
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Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
K. T. Queeney,M. K. Weldon,Jane P. Chang,Yves J. Chabal,Alejandra B. Gurevich,J. Sapjeta,Robert L. Opila +6 more
TL;DR: In this article, the authors investigated the nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface using infrared and x-ray photoelectron spectroscopies.
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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
M. K. Weldon,M. Collot,Yves J. Chabal,V.C. Venezia,A. Agarwal,T. E. Haynes,D. J. Eaglesham,S. B. Christman,E. E. Chaban +8 more
TL;DR: In this paper, He acts physically as a source of internal pressure but also in an indirect chemical sense, leading to the reconversion of molecular H2 to bound Si-H in VH2-like defects.
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Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy
TL;DR: In this article, the authors used multiple internal transmission infrared absorption spectroscopy to probe the interface between the wafers upon initial joining and also during subsequent annealing steps, and observed a pronounced shift in the Si-H stretching frequency due to the physical interaction (van der Waals attraction) that occurs when the surfaces come into intimate contact.
Journal ArticleDOI
Si–H bending modes as a probe of local chemical structure: Thermal and chemical routes to decomposition of H2O on Si(100)-(2×1)
M. K. Weldon,K. T. Queeney,Alejandra B. Gurevich,Boris Stefanov,Yves J. Chabal,Krishnan Raghavachari +5 more
TL;DR: In this paper, surface infrared spectroscopy and density functional cluster calculations are used to study the thermal and atomic hydrogen-induced decomposition of water molecules on the clean Si(100)-(2×1) surface.