M. K. Weldon

TL;DR: In this paper, the fundamental mechanism underlying hydrogen-induced exfoliation of silicon, using a combination of spectroscopic and microscopic techniques, was investigated, and the evolution of the internal defect structure as a function of implanted hydrogen concentration and annealing temperature was studied.

TL;DR: In this article, the authors investigated the nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface using infrared and x-ray photoelectron spectroscopies.

TL;DR: In this paper, He acts physically as a source of internal pressure but also in an indirect chemical sense, leading to the reconversion of molecular H2 to bound Si-H in VH2-like defects.

TL;DR: In this article, the authors used multiple internal transmission infrared absorption spectroscopy to probe the interface between the wafers upon initial joining and also during subsequent annealing steps, and observed a pronounced shift in the Si-H stretching frequency due to the physical interaction (van der Waals attraction) that occurs when the surfaces come into intimate contact.

TL;DR: In this paper, surface infrared spectroscopy and density functional cluster calculations are used to study the thermal and atomic hydrogen-induced decomposition of water molecules on the clean Si(100)-(2×1) surface.