다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

The recent literature concerning the magnetocaloric effect (MCE) has been reviewed. The MCE properties have been compiled and correlations have been made comparing the behaviours of the different families of magnetic materials which exhibit large or unusual MCE values. These families include: the lanthanide (R) Laves phases (RM2, where M = Al, Co and Ni), Gd5(Si1−xGex)4 ,M n(As1−xSbx), MnFe(P1−xAsx), La(Fe13−xSix) and their hydrides and the manganites (R1−xMxMnO3, where R = lanthanide and M = Ca, Sr and Ba). The potential for use of these materials in magnetic refrigeration is discussed, including a comparison with Gd as a near room temperature active magnetic regenerator material. (Some figures in this article are in colour only in the electronic version)

https://iopscience.iop.org/article/10.1088/0034-4885/68/6/R04/pdf

Recent developments in magnetocaloric materials

We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical work, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents which originate from spin-orbit coupling. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors, have more clearly established systematic trends. These two developments in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of Berry-phase curvatures and it is therefore an intrinsic quantum mechanical property of a perfect cyrstal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. We review the full modern semiclassical treatment of the AHE together with the more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Finally we discuss outstanding issues and avenues for future investigation.

/pdf/anomalous-hall-effect-tyeyld308t.pdf

Anomalous hall effect

The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs)1,2 is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices3,4,5. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studied for device applications, exhibit a magnetoresistance ratio up to 70% at room temperature6. This low magnetoresistance seriously limits the feasibility of spintronics devices. Here, we report a giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs. The origin of this enormous TMR effect is coherent spin-polarized tunnelling, where the symmetry of electron wave functions plays an important role. Moreover, we observed that their tunnel magnetoresistance oscillates as a function of tunnel barrier thickness, indicating that coherency of wave functions is conserved across the tunnel barrier. The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM.

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM). The performance of these devices is currently limited by the modest (< approximately 70%) room-temperature tunnelling magnetoresistance (TMR) of technologically relevant MTJs. Much higher TMR values have been theoretically predicted for perfectly ordered (100) oriented single-crystalline Fe/MgO/Fe MTJs. Here we show that sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented (100) MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to approximately 220% at room temperature and approximately 300% at low temperatures. Consistent with these high TMR values, superconducting tunnelling spectroscopy experiments indicate that the tunnelling current has a very high spin polarization of approximately 85%, which rivals that previously observed only using half-metallic ferromagnets. Such high values of spin polarization and TMR in readily manufactureable and highly thermally stable devices (up to 400 degrees C) will accelerate the development of new families of spintronic devices.

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

In this paper we report an exhaustive experimental work on magnetoresistance effects found in a system in which a large number of nanocontacts are produced between oxidized Fe fine particles. We have obtained the following performances: i) Huge low field room temperature magnetoresistance (over 1000%). ii) Non-linear I-V at different applied fields and temperatures. iii) Large thermal stability and reproducible resistance value under thermal cycles from room temperature down to 5 K. iv) Easy to fabricate with an almost 100% success. v) Heavy duty and transportable samples with reproducibility tested in several laboratories. We realized that the extraordinary effect found is related to the oxygen content at the particles surface

Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices

The coating of functional magnetic nanoparticles with porous inorganic shells is a very important issue for various applications. Here we describe iron encapsulated in silica and carbon cages. The inorganic shell provides relevant properties: prevents aggregation and degradation of the metallic core, it can be functionalized to allow the binding of drugs or biomolecules to the carrier, is biocompatible, non-toxic, and possesses hydroxyl (i.e., silica)1 or carboxyl (i.e., carbon after chemical oxidation)2 surface groups. Those core-shell nanoparticles are good candidates for drug delivery applications; the drug release can be triggered by means of slow diffusion of the drug previously adsorbed on the porous matrix2,3.

HRTEM characterization of core-shell Fe@C and Fe@SiO2 magnetic nanoparticles prepared by the arc-discharge plasma method

Spin injection and spin-charge conversion processes in all-oxide La2/3Sr1/3MnO3/SrIrO3 (LSMO/SIO) heterostructures with different SIO layer thickness and interfacial features have been studied. Ferromagnetic resonance (FMR) technique has been used to generate pure spin currents by spin pumping (SP) in ferromagnetic (FM) half-metallic LSMO. The change of the resonance linewidth in bare LSMO layers and LSMO/SIO heterostructures suggests a successful spin injection into the SIO layers. However, low values of the spin mixing conductance, compared to more traditional permalloy (Py)/Pt or yttrium iron garnet (YIG)/Pt systems, are found. A thorough analysis of the interfaces by high-resolution scanning transmission electron microscopy (HR-STEM) imaging suggests that they are structurally clean and atomic sharp, but a compositional analysis by energy-dispersive X-ray spectroscopy (EDS) reveals the interdiffusion of La, Ir, and Mn atomic species in the first atomic layers close to the interface. Inverse spin Hall effect (ISHE) measurements evidence that interfacial features play a very relevant role in controlling the effectiveness of the spin injection process and low transversal ISHE voltage signals are detected. In addition, it is found that larger voltage signals are detected for the lowest SIO layer thickness highlighting the role of the spin diffusion length (λsd)/SIO layer thickness ratio. The values of ISHE voltage are rather low but allow us to determine the spin Hall angle of SIO (θSH ≈ 1.12% at T = 250 K), which is remarkably similar to that obtained for the well-known Py/Pt system, therefore suggesting that SIO could be a promising spin-Hall material.

Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures.

Morphology, surface and finite size effects in magnetic nanoparticles have been the subject of growing interest in recent years from both experimental and theoretical point of view [1] The magnetic properties are strongly associated with the morphological and structural homogeneity of the nanoparticles [2] Interparticle interactions also play an important role in the magnetic behaviour of an ensemble of nanoparticles, which differs from that of non-interacting systems [3]

Morphological characterization by HRTEM and STEM of Fe3O4 hollow nano-spheres

/pdf/a55mn-nmr-study-of-la0-33nd0-33ca0-34mn-o3with16o-and18o-39c9z1vdsz.pdf

M. R. Ibarra

Papers

Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices

HRTEM characterization of core-shell Fe@C and Fe@SiO2 magnetic nanoparticles prepared by the arc-discharge plasma method

Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures.

Morphological characterization by HRTEM and STEM of Fe3O4 hollow nano-spheres

A55Mn NMR Study of La0.33Nd0.33Ca0.34Mn O3with16O and18O