다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

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Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

The field of self-assembled monolayers (SAMs) has witnessed tremendous growth in synthetic sophistication and depth of characterization over the past 15 years.1 However, it is interesting to comment on the modest beginning and on important milestones. The field really began much earlier than is now recognized. In 1946 Zisman published the preparation of a monomolecular layer by adsorption (self-assembly) of a surfactant onto a clean metal surface.2 At that time, the potential of self-assembly was not recognized, and this publication initiated only a limited level of interest. Early work initiated in Kuhn’s laboratory at Gottingen, applying many years of experience in using chlorosilane derivative to hydrophobize glass, was followed by the more recent discovery, when Nuzzo and Allara showed that SAMs of alkanethiolates on gold can be prepared by adsorption of di-n-alkyl disulfides from dilute solutions.3 Getting away from the moisture-sensitive alkyl trichlorosilanes, as well as working with crystalline gold surfaces, were two important reasons for the success of these SAMs. Many self-assembly systems have since been investigated, but monolayers of alkanethiolates on gold are probably the most studied SAMs to date. The formation of monolayers by self-assembly of surfactant molecules at surfaces is one example of the general phenomena of self-assembly. In nature, self-assembly results in supermolecular hierarchical organizations of interlocking components that provides very complex systems.4 SAMs offer unique opportunities to increase fundamental understanding of self-organization, structure-property relationships, and interfacial phenomena. The ability to tailor both head and tail groups of the constituent molecules makes SAMs excellent systems for a more fundamental understanding of phenomena affected by competing intermolecular, molecular-substrates and molecule-solvent interactions like ordering and growth, wetting, adhesion, lubrication, and corrosion. That SAMs are well-defined and accessible makes them good model systems for studies of physical chemistry and statistical physics in two dimensions, and the crossover to three dimensions. SAMs provide the needed design flexibility, both at the individual molecular and at the material levels, and offer a vehicle for investigation of specific interactions at interfaces, and of the effect of increasing molecular complexity on the structure and stability of two-dimensional assemblies. These studies may eventually produce the design capabilities needed for assemblies of three-dimensional structures.5 However, this will require studies of more complex systems and the combination of what has been learned from SAMs with macromolecular science. The exponential growth in SAM research is a demonstration of the changes chemistry as a disciAbraham Ulman was born in Haifa, Israel, in 1946. He studied chemistry in the Bar-Ilan University in Ramat-Gan, Israel, and received his B.Sc. in 1969. He received his M.Sc. in phosphorus chemistry from Bar-Ilan University in 1971. After a brief period in industry, he moved to the Weizmann Institute in Rehovot, Israel, and received his Ph.D. in 1978 for work on heterosubstituted porphyrins. He then spent two years at Northwestern University in Evanston, IL, where his main interest was onedimensional organic conductors. In 1985 he joined the Corporate Research Laboratories of Eastman Kodak Company, in Rochester, NY, where his research interests were molecular design of materials for nonlinear optics and self-assembled monolayers. In 1994 he moved to Polytechnic University where he is the Alstadt-Lord-Mark Professor of Chemistry. His interests encompass self-assembled monolayers, surface engineering, polymers at interface, and surfaces phenomena. 1533 Chem. Rev. 1996, 96, 1533−1554

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Formation and Structure of Self-Assembled Monolayers.

The surface science of titanium dioxide

In-situ grazing incidence X-ray diffraction study of electrochemically deposited Pb monolayers on Ag(111)

Structure of an ordered self-assembled monolayer of docosyl mercaptan on gold(111) by surface x-ray diffraction

A magnetic tunnel junction (MTJ) memory cell and a magnetic random access memory (MRAM) incorporating the cells has upper and lower cell electrodes that are formed of bilayers that provide electrical connection between the cells and the copper word and bit lines of the MRAM. The bilayers are formed of a first layer of tantalum nitride or tungsten nitride and a second layer of tantalum or tungsten. In one embodiment TaN is formed directly on the copper and low-resistivity alpha-Ta is formed directly on the TaN. If the cells use an antiferromagnetic layer to fix the moment of the pinned ferromagnetic layer, then Pt—Mn is the preferred material formed over the alpha-Ta. The bilayer can function as a lateral electrode to connect a horizontally spaced-apart cell and a copper stud in the MRAM.

Magnetic random access memory with thermally stable magnetic tunnel junction cells

The thermal stability of exchange-biased magnetic tunnel junctions is explored using near-edge x-ray absorption fine-structure spectroscopy. Structures with Ir–Mn antiferromagnetic exchange bias layers are much more thermally stable than similar structures with Fe–Mn exchange bias layers. In both cases, diffusion of Mn from the antiferromagnetic layer through thin exchange-biased ferromagnetic layers to the tunnel barrier is observed at elevated temperatures. This observation explains the diminished magnetoresistance of these structures on annealing even though the resistance of the tunnel junctions is hardly changed.

Thermal stability of IrMn and MnFe exchange-biased magnetic tunnel junctions

The electric-field-induced metallization of insulating oxides is a powerful means of exploring and creating exotic electronic states. Here we show by the use of ionic liquid gating that two distinct facets of rutile TiO2, namely, (101) and (001), show clear evidence of metallization, with a disorder-induced metal-insulator transition at low temperatures, whereas two other facets, (110) and (100), show no substantial effects. This facet-dependent metallization can be correlated with the surface energy of the respective crystal facet and, thus, is consistent with oxygen vacancy formation and diffusion that results from the electric fields generated within the electric double layers at the ionic liquid/TiO2 interface. These effects take place at even relatively modest gate voltages.

Mahesh G. Samant

Papers

In-situ grazing incidence X-ray diffraction study of electrochemically deposited Pb monolayers on Ag(111)

Structure of an ordered self-assembled monolayer of docosyl mercaptan on gold(111) by surface x-ray diffraction

Magnetic random access memory with thermally stable magnetic tunnel junction cells

Thermal stability of IrMn and MnFe exchange-biased magnetic tunnel junctions

Crystal-facet-dependent metallization in electrolyte-gated rutile TiO2 single crystals.