다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

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Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

The field of self-assembled monolayers (SAMs) has witnessed tremendous growth in synthetic sophistication and depth of characterization over the past 15 years.1 However, it is interesting to comment on the modest beginning and on important milestones. The field really began much earlier than is now recognized. In 1946 Zisman published the preparation of a monomolecular layer by adsorption (self-assembly) of a surfactant onto a clean metal surface.2 At that time, the potential of self-assembly was not recognized, and this publication initiated only a limited level of interest. Early work initiated in Kuhn’s laboratory at Gottingen, applying many years of experience in using chlorosilane derivative to hydrophobize glass, was followed by the more recent discovery, when Nuzzo and Allara showed that SAMs of alkanethiolates on gold can be prepared by adsorption of di-n-alkyl disulfides from dilute solutions.3 Getting away from the moisture-sensitive alkyl trichlorosilanes, as well as working with crystalline gold surfaces, were two important reasons for the success of these SAMs. Many self-assembly systems have since been investigated, but monolayers of alkanethiolates on gold are probably the most studied SAMs to date. The formation of monolayers by self-assembly of surfactant molecules at surfaces is one example of the general phenomena of self-assembly. In nature, self-assembly results in supermolecular hierarchical organizations of interlocking components that provides very complex systems.4 SAMs offer unique opportunities to increase fundamental understanding of self-organization, structure-property relationships, and interfacial phenomena. The ability to tailor both head and tail groups of the constituent molecules makes SAMs excellent systems for a more fundamental understanding of phenomena affected by competing intermolecular, molecular-substrates and molecule-solvent interactions like ordering and growth, wetting, adhesion, lubrication, and corrosion. That SAMs are well-defined and accessible makes them good model systems for studies of physical chemistry and statistical physics in two dimensions, and the crossover to three dimensions. SAMs provide the needed design flexibility, both at the individual molecular and at the material levels, and offer a vehicle for investigation of specific interactions at interfaces, and of the effect of increasing molecular complexity on the structure and stability of two-dimensional assemblies. These studies may eventually produce the design capabilities needed for assemblies of three-dimensional structures.5 However, this will require studies of more complex systems and the combination of what has been learned from SAMs with macromolecular science. The exponential growth in SAM research is a demonstration of the changes chemistry as a disciAbraham Ulman was born in Haifa, Israel, in 1946. He studied chemistry in the Bar-Ilan University in Ramat-Gan, Israel, and received his B.Sc. in 1969. He received his M.Sc. in phosphorus chemistry from Bar-Ilan University in 1971. After a brief period in industry, he moved to the Weizmann Institute in Rehovot, Israel, and received his Ph.D. in 1978 for work on heterosubstituted porphyrins. He then spent two years at Northwestern University in Evanston, IL, where his main interest was onedimensional organic conductors. In 1985 he joined the Corporate Research Laboratories of Eastman Kodak Company, in Rochester, NY, where his research interests were molecular design of materials for nonlinear optics and self-assembled monolayers. In 1994 he moved to Polytechnic University where he is the Alstadt-Lord-Mark Professor of Chemistry. His interests encompass self-assembled monolayers, surface engineering, polymers at interface, and surfaces phenomena. 1533 Chem. Rev. 1996, 96, 1533−1554

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Formation and Structure of Self-Assembled Monolayers.

The surface science of titanium dioxide

Strong interactions, or correlations, between the d or f electrons in transition-metal oxides lead to various types of metal-insulator transitions that can be triggered by external parameters such as temperature, pressure, doping, magnetic fields and electric fields. Electric-field-induced metallization of such materials from their insulating states could enable a new class of ultrafast electronic switches and latches. However, significant questions remain about the detailed nature of the switching process. Here, we show, in the canonical metal-to-insulator transition system V₂O₃, that ultrafast voltage pulses result in its metallization only after an incubation time that ranges from ∼150 ps to many nanoseconds, depending on the electric field strength. We show that these incubation times can be accounted for by purely thermal effects and that intrinsic electronic-switching mechanisms may only be revealed using larger electric fields at even shorter timescales.

Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

The use of electric fields to alter the conductivity of correlated electron oxides is a powerful tool to probe their fundamental nature as well as for the possibility of developing novel electronic devices. Vanadium dioxide (VO2) is an archetypical correlated electron system that displays a temperature-controlled insulating to metal phase transition near room temperature. Recently, ionic liquid gating, which allows for very high electric fields, has been shown to induce a metallic state to low temperatures in the insulating phase of epitaxially grown thin films of VO2. Surprisingly, the entire film becomes electrically conducting. Here, we show, from in situ synchrotron X-ray diffraction and absorption experiments, that the whole film undergoes giant, structural changes on gating in which the lattice expands by up to ∼3% near room temperature, in contrast to the 10 times smaller (∼0.3%) contraction when the system is thermally metallized. Remarkably, these structural changes are fully reversible on reverse gating. Moreover, we find these structural changes and the concomitant metallization are highly dependent on the VO2 crystal facet, which we relate to the ease of electric-field-induced motion of oxygen ions along chains of edge-sharing VO6 octahedra that exist along the (rutile) c axis.

https://www.pnas.org/content/pnas/112/4/1013.full.pdf

Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating

Formation of an ordered self-assembled monolayer of docosaneselenol on gold(111). Structure by surface x-ray diffraction

A magnetic tunnel element that can be used, for example, as part of a read head or a magnetic memory cell, includes a first layer formed from an amorphous material, an amorphous tunnel barrier layer, and an interface layer between the first layer and the tunnel barrier layer. The interface layer is formed from a material that is crystalline when the material is in isolation from both the first layer and the tunnel barrier layer. Alternatively, the thickness of the interface layer is selected so that the interface layer is not crystalline. The first layer is formed from at least one material selected from the group consisting of amorphous ferromagnetic material, amorphous ferrimagnetic materials, and amorphous non-magnetic materials. The interface layer is formed from a material selected from the group consisting of a ferromagnetic material and a ferrimagnetic material.

Magnetic tunnel junctions with improved tunneling magneto-resistance

Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.

Mahesh G. Samant

Papers

Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating

Formation of an ordered self-assembled monolayer of docosaneselenol on gold(111). Structure by surface x-ray diffraction

Magnetic tunnel junctions with improved tunneling magneto-resistance

Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen