Showing papers by "Mahesh Kumar published in 2017"

Correction: Corrigendum: A dual specificity kinase, DYRK1A, as a potential therapeutic target for head and neck squamous cell carcinoma

Abstract: Scientific Reports 6: Article number: 36132; published online: 31 October 2016; updated: 26 June 2017. This Article contains errors. The Acknowledgements section is incomplete. “We thank the Department of Biotechnology (DBT), Government of India for research support to the Institute of Bioinformatics (IOB), Bangalore.

UV-activated MoS2 Based Fast and Reversible NO2 Sensor at Room Temperature

Abstract: Two-dimensional materials have gained considerable attention in chemical sensing owing to their naturally high surface-to-volume ratio. However, the poor response time and incomplete recovery at room temperature restrict their application in high-performance practical gas sensors. Herein, we demonstrate ultrafast detection and reversible MoS2 gas sensor at room temperature. The sensor’s performance is investigated to NO2 at room temperature, under thermal and photo energy. Incomplete recovery and high response time of ∼249 s of sensor are observed at room temperature. Thermal energy is enough to complete recovery, but it is at the expense of sensitivity. Further, under photo excitation, MoS2 exhibits an enhancement in sensitivity with ultrafast response time of ∼29 s and excellent recovery to NO2 (100 ppm) at room temperature. This significant improvement in sensitivity (∼30%) and response time (∼88%) is attributed to the charge perturbation on the surface of the sensing layer in the context of NO2/MoS2 i...

Pd/ZnO nanorods based sensor for highly selective detection of extremely low concentration hydrogen

Abstract: We report highly hydrogen selective Pd contacted ZnO nanorods based sensor detecting low concentration even at low operating temperature of 50 °C. The sensor performance was investigated for various gases such as H2, CH4, H2S and CO2 at different operating temperatures from 50 °C to 175 °C for various gas concentrations ranging from 7 ppm to 10,000 ppm (1%). The sensor is highly efficient as it detects hydrogen even at low concentration of ~7 ppm and at operating temperature of 50 °C. The sensor’s minimum limit of detection and relative response at 175 °C were found 7 ppm with ~38.7% for H2, 110 ppm with ~6.08% for CH4, 500 ppm with ~10.06% for H2S and 1% with ~11.87% for CO2. Here, Pd exhibits dual characteristics as metal contact and excellent catalyst to hydrogen molecules. The activation energy was calculated for all the gases and found lowest ~3.658 kJ/mol for H2. Low activation energy accelerates desorption reactions and enhances the sensor’s performance.

Fast detection and low power hydrogen sensor using edge-oriented vertically aligned 3-D network of MoS2 flakes at room temperature

Abstract: The increased usage of hydrogen as a next generation clean fuel strongly demands the parallel development of room temperature and low power hydrogen sensors for their safety operation. In this work, we report strong evidence for preferential hydrogen adsorption at edge-sites in an edge oriented vertically aligned 3-D network of MoS2 flakes at room temperature. The vertically aligned edge-oriented MoS2 flakes were synthesised by a modified CVD process on a SiO2/Si substrate and confirmed by Scanning Electron Microscopy. Raman spectroscopy and PL spectroscopy reveal the signature of few-layer MoS2 flakes in the sample. The sensor's performance was tested from room temperature to 150 °C for 1% hydrogen concentration. The device shows a fast response of 14.3 s even at room temperature. The sensitivity of the device strongly depends on temperature and increases from ∼1% to ∼11% as temperature increases. A detail hydrogen sensing mechanism was proposed based on the preferential hydrogen adsorption at MoS2 edge ...

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Abstract: In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The ...

Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network.

Abstract: Room temperature hydrogen sensors were fabricated from Au embedded ZnO nano-networks using a 30 mW GaN ultraviolet LED. The Au-decorated ZnO nano-networks were deposited on a SiO2/Si substrate by a chemical vapour deposition process. X-ray diffraction (XRD) spectrum analysis revealed a hexagonal wurtzite structure of ZnO and presence of Au. The ZnO nanoparticles were interconnected, forming nano-network structures. Au nanoparticles were uniformly distributed on ZnO surfaces, as confirmed by FESEM imaging. Interdigitated electrodes (IDEs) were fabricated on the ZnO nano-networks using optical lithography. Sensor performances were measured with and without UV illumination, at room temperate, with concentrations of hydrogen varying from 5 ppm to 1%. The sensor response was found to be ∼21.5% under UV illumination and 0% without UV at room temperature for low hydrogen concentration of 5 ppm. The UV-photoactivated mode enhanced the adsorption of photo-induced O- and O2- ions, and the d-band electron transition from the Au nanoparticles to ZnO-which increased the chemisorbed reaction between hydrogen and oxygen. The sensor response was also measured at 150 °C (without UV illumination) and found to be ∼18% at 5 ppm. Energy efficient low cost hydrogen sensors can be designed and fabricated with the combination of GaN UV LEDs and ZnO nanostructures.

Method and apparatus for evaluating driver performance and determining driver rewards

Abstract: The present invention is directed towards a method for evaluating driver performance. In exemplary embodiments, the method comprises receiving driver activity associated with a driver of a vehicle in a fleet, determining a driver score based on predetermined criteria and generating and updating a driver profile based on the driver activity and evaluating the driver score to generate rewards for the driver and updating the driver profile accordingly.

Formation of hexagonal 9R silicon polytype by ion implantation

Abstract: Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

Composition and luminescence of Si and SiO 2 layers co-implanted with Ga and N ions

Abstract: With the aim to establish the possibility of synthesis of GaN inclusions by co-implantation of Ga and N ions in silicon and SiO2 films on a silicon substrate, the chemical composition and photoluminescence of implanted layers have been investigated. It is observed that the heavy loss of implanted atoms occurs owing to the out-diffusion (Ga from Si, and Ga and N from SiO2) in the process of post-implantation annealing. Preliminary implantation of nitrogen to form silicon nitride or oxynitride layers is shown to reduce the degree of impurity losses. In the photoluminescence spectrum of both Si and SiO2 subjected to Ga and N co-implantation, the band at 530-550 nm is present, which can be related to 'defect' luminescence of GaN.

Vacuum thermal deposition of crystalline, uniform and stoichiometric CdS thin films in ambient H2S atmosphere

Abstract: Crystalline, uniform and stoichiometric thin films of CdS have been fabricated on soda lime glass (SLG) substrates using vacuum thermal deposition method in the presence of hydrogen sulphide (H 2 S) atmosphere. The consequence of ambient H 2 S on the growth, quality and structure-property relationship of vacuum deposited CdS thin films has been investigated. The deposited films have been characterized by XRD, SEM with EDX analysis, AFM, XPS and optical spectroscopy. The physical characterization of as-deposited CdS films reveals that the films deposited in controlled H 2 S ambient are more crystalline, highly uniform and stoichiometric in comparison to films deposited without H 2 S atmosphere.

Helium exchange gas based variable temperature insert for cryogen-free magnet system

Abstract: A cryocooler based variable temperature inserts (VTI) has been designed and developed for measurement of physical properties at low temperature and high magnetic field. The VTI, designed using the helium exchange gas principle, needs to be integrated in the warm bore of an existing 6 T cryogen free magnet system. The lowest temperature achieved at the sample is 5 K at 34.5 kPa (~5 psi) gaseous helium environment in the sample space. The equilibrium temperature of the sample, at the vacuum condition, is 8.7 K. The cool-down time of the sample at vacuum environment is 9 hrs whereas it takes 7 hrs in presence of helium exchange gas. The temperature of the sample was varied up to 325 K. The stability of the temperature achieved is less than 50 mK. The cooling and heating curves has been studied to estimate time required for a complete cycle of experiment. This paper will briefly present the design and performance of VTI system in temperature range of 5-325 K.