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Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

Micro-combs: A novel generation of optical sources

A silicon-on-insulator device combining two four-wave-mixing photon-pair sources in an interferometer with a reconfigurable phase shifter is used to create and manipulate non-degenerate or degenerate, path-entangled or path-unentangled photon pairs. A quantum interference visibility of nearly 100% is observed on-chip. This device is a first step towards fully integrated quantum technologies.

On-chip quantum interference between silicon photon-pair sources

Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.

/pdf/on-chip-light-sources-for-silicon-photonics-ky23qv18q4.pdf

On-chip light sources for silicon photonics

Coupled optical resonators are one approach to slowing the propagation of light. An array of more than 100 such resonators has now been demonstrated using a photonic crystal. Such a structure can slow light down to below 1% of its speed in a vacuum.

Large-scale arrays of ultrahigh-Q coupled nanocavities

We experimentally demonstrate an ultra high Q/V nanocavity on SOI substrate. The design is based on modal adaptation within the cavity and allows to measure a quality factor of 58.000 for a modal volume of 0.6(λ/n)3. This record Q/V value of 105 achieved for a structure standing on a physical substrate, rather than on membrane, is in very good agreement with theoretical predictions also shown. Based on these experimental results, we show that further refinements of the cavity design could lead to Q/V ratios close to 106.

https://hal.archives-ouvertes.fr/hal-00394779/document

Ultra-High Q/V Fabry-Perot microcavity on SOI substrate

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (23 ± 18) × 10−7 Ω-cm2 for anneal temperatures of 340 °C The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge

/pdf/ohmic-contacts-to-n-type-germanium-with-low-specific-contact-3ne8gumzsw.pdf

Ohmic contacts to n-type germanium with low specific contact resistivity

The development of nanofabrication techniques for creating high aspect ratio (∼50:1) sub-10 nm silicon nanowires (SiNWs) with smooth, uniform, and straight vertical sidewalls using an inductively coupled plasma (ICP) etching process at 20 °C is reported. In particular, to improve the quality and flexibility of the pattern transfer process for high aspect ratio SiNWs, hydrogen silsesquioxane, a high-resolution, inorganic, negative-tone resist for electron-beam lithography has been used as both the resist for defining sub-10 nm patterns and the hard mask for etching the underneath silicon material. The effects of SF6/C4F8 gas flow rates, chamber pressure, platen power and ICP power on the etch rate, selectivity, and sidewall profile are investigated. To minimize plasma-induced sidewall damage, moderate plasma excitation power (ICP power of 600 W) and low ion energy (platen power of 6–12 W) were used. Using the optimized etch process at room temperature (20 °C), the authors have successfully fabricated sub-1...

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

/pdf/stimulated-and-spontaneous-four-wave-mixing-in-silicon-on-5e9lv9ens5.pdf

Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

Microcavities consisting of two identical tapered mirrors etched into silicon-on-insulator ridge waveguides are investigated for operation at telecommunication wavelengths. They offer very small modal volumes of approximately 0.6 (λ/n)3 and calculated intrinsic Q factors of 400 000. We have measured a Q factor of 8900 for a loaded cavity, in agreement with the theoretical value. In contrast to recent works performed on suspended membranes, the buried SiO2 layer is not removed. The cavities possess strong mechanical robustness, thus making them attractive from the viewpoint of integration in large systems. The cavity Q factor is much larger than those previously obtained for similar geometries on a substrate.

http://iopscience.iop.org/article/10.1088/1367-2630/8/9/204/pdf

Philippe Velha

Papers

Ultra-High Q/V Fabry-Perot microcavity on SOI substrate

Ohmic contacts to n-type germanium with low specific contact resistivity

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

Ultra-high-reflectivity photonic-bandgap mirrors in a ridge SOI waveguide