Ohmic contacts to n-type germanium with low specific contact resistivity
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A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (23 −± 18) −7 Ω-cm2 for anneal temperatures of 340 −°C.Abstract:
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (23 ± 18) × 10−7 Ω-cm2 for anneal temperatures of 340 °C The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Geread more
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Journal ArticleDOI
Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
Ryan E. Warburton,G. Intermite,Maksym Myronov,Phil Allred,David R. Leadley,Kevin Gallacher,Douglas J. Paul,N.J. Pilgrim,L. Lever,Zoran Ikonic,Robert W. Kelsall,Edgar Huante-Ceron,Andrew P. Knights,Gerald S. Buller +13 more
TL;DR: In this article, the design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Journal ArticleDOI
The thermoelectric properties of Ge/SiGe modulation doped superlattices
Antonio Samarelli,L. Ferre Llin,Stefano Cecchi,Jacopo Frigerio,Tanja Etzelstorfer,Elisabeth Müller,Yuan Zhang,Jeremy R. Watling,Daniel Chrastina,Giovanni Isella,J. Stangl,James P. Hague,John M. R. Weaver,Phillip S. Dobson,Douglas J. Paul +14 more
TL;DR: In this article, the thermoelectric and physical properties of superlattices consisting of modulation doped Ge quantum wells inside Si 1−yGey barriers are presented.
Journal ArticleDOI
Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer
TL;DR: In this paper, a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height.
Journal ArticleDOI
The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices
L. Ferre Llin,Antonio Samarelli,Stefano Cecchi,Tanja Etzelstorfer,E. Müller Gubler,Daniel Chrastina,Giovanni Isella,J. Stangl,John M. R. Weaver,Phillip S. Dobson,Douglas J. Paul +10 more
TL;DR: The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a series of microfabricated test structures.
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The ${\sim } 3\,{\times } 10^{20}$ cm $^{-3}$ Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing
TL;DR: In this article, the authors showed that due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface, which leads to the ideality factor of 1.6 for the ge/Si hetero-junction diode with ON/OFF ratio of 1\times 10^{5}$.
References
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Book
Binary alloy phase diagrams
TL;DR: Binary Alloy Phase Diagrams, Second Edition, Plus Updates, on CD-ROM offers you the same high-quality, reliable data you'll find in the 3-volume print set published by ASM in 1990.
Journal ArticleDOI
Fermi-level pinning and charge neutrality level in germanium
TL;DR: The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit.
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Academic and industry research progress in germanium nanodevices
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
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Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
TL;DR: In this article, Ohmic and Schottky properties of metal/germanium (Ge) junction have been investigated and it has been shown that Fermi level at metal/Ge interface is intrinsically pinned at the charge neutrality level (CNL) characterized by the metal-induced gap states model.
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Thin film reaction of transition metals with germanium
TL;DR: In this paper, the thermally induced reaction of 20 transition metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, and Cu) with Ge substrates was carried out in order to identify appropriate contact materials in Ge-based microelectronic circuits.