M
Manabu Yanagihara
Researcher at Panasonic
Publications - 89
Citations - 3153
Manabu Yanagihara is an academic researcher from Panasonic. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 24, co-authored 89 publications receiving 2887 citations.
Papers
More filters
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Patent
Nitride semiconductor device
TL;DR: In this article, a nitride semiconductor device is defined as: a first semiconductor layer made of first nitride, a second semiconductor, made of second nitride having a bandgap wider than that of the first, a control layer selectively formed on, or above, an upper portion of the second, and a third semiconductor having a p-type conductivity.
Patent
Field effect transistor and method for fabricating the same
TL;DR: In this article, an AlN buffer layer, an undoped GaN layer, undoped AlGaN layer and a heavily doped p-type GaN layers are formed in this order.
Proceedings ArticleDOI
Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
Saichiro Kaneko,Masayuki Kuroda,Manabu Yanagihara,Ayanori Ikoshi,Hideyuki Okita,Tatsuo Morita,Kenichiro Tanaka,Masahiro Hikita,Yasuhiro Uemoto,Satoru Takahashi,Tetsuzo Ueda +10 more
TL;DR: In this article, the Hybrid Drain-embedded Gate Injection Transistor (HD-GIT) is proposed to suppress current collapse at 850 V of the drain voltage or over, which significantly helps to achieve stable system operation and is very promising for future switching power supply applications.
Journal ArticleDOI
AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
Masahiro Hikita,Manabu Yanagihara,K. Nakazawa,Hiroaki Ueno,Yutaka Hirose,Tetsuzo Ueda,Yasuhiro Uemoto,Tsuyoshi Tanaka,Daisuke Ueda,T. Egawa +9 more
TL;DR: In this article, a high power AlGaN/GaN HFET fabricated on a 4-in conductive Si substrate with a source-via-grounding (SVG) structure is presented.