Patent
Nitride semiconductor device
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TLDR
In this article, a nitride semiconductor device is defined as: a first semiconductor layer made of first nitride, a second semiconductor, made of second nitride having a bandgap wider than that of the first, a control layer selectively formed on, or above, an upper portion of the second, and a third semiconductor having a p-type conductivity.Abstract:
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.read more
Citations
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References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Patent
Power semiconductor device
TL;DR: In this paper, a gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell, and a buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode.
Journal ArticleDOI
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
Shigefusa F. Chichibu,Amber C. Abare,M. S. Minsky,Stacia Keller,S. B. Fleischer,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,Larry A. Coldren,Steven P. DenBaars,T. Sota +10 more
TL;DR: In this paper, the emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ and L exceed the valence band discontinuity, ΔEV.
Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TL;DR: AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.
Patent
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
TL;DR: An integrated heterostructure of Group III-V nitride compound semiconductors is formed on a multicomponent platform which includes a substrate of monocrystalline silicon carbide and a non-nitride buffer layer of monocalstalline zinc oxide as discussed by the authors.